All-optical and gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier

L. Q. Guo, M. J. Connelly

Research output: Contribution to journalArticlepeer-review

Abstract

An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.

Original languageEnglish
Pages (from-to)2938-2943
Number of pages6
JournalOptics Express
Volume14
Issue number7
DOIs
Publication statusPublished - Apr 2006

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