An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3

M. P. Smylie; K. Willa; K. Ryan; H. Claus; W. K. Kwok; Y. Qiu; Y. S. Hor; U. Welp

doi:10.1016/j.physc.2017.10.010

An increase in T_c under hydrostatic pressure in the superconducting doped topological insulator Nb_0.25Bi₂Se₃

M. P. Smylie, K. Willa, K. Ryan, H. Claus, W. K. Kwok, Y. Qiu, Y. S. Hor, U. Welp

Research output: Contribution to journal › Article › peer-review

Abstract

We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb_0.25Bi₂Se₃ via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues Cu_xBi₂Se₃ and Sr_xBi₂Se₃ where smooth suppression of T_c is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi₂Se₃ family are believed to be single-band.

Original language	English
Pages (from-to)	58-61
Number of pages	4
Journal	Physica C: Superconductivity and its applications
Volume	543
DOIs	https://doi.org/10.1016/j.physc.2017.10.010
Publication status	Published - 15 Dec 2017
Externally published	Yes

Keywords

Nematic superconductors
Pressure-enhanced superconductivity
Superconducting topological insulators
Topological superconductors

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10.1016/j.physc.2017.10.010

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title = "An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3",

abstract = "We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.",

keywords = "Nematic superconductors, Pressure-enhanced superconductivity, Superconducting topological insulators, Topological superconductors",

author = "Smylie, {M. P.} and K. Willa and K. Ryan and H. Claus and Kwok, {W. K.} and Y. Qiu and Hor, {Y. S.} and U. Welp",

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doi = "10.1016/j.physc.2017.10.010",

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T1 - An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3

AU - Smylie, M. P.

AU - Willa, K.

AU - Ryan, K.

AU - Claus, H.

AU - Kwok, W. K.

AU - Qiu, Y.

AU - Hor, Y. S.

AU - Welp, U.

PY - 2017/12/15

Y1 - 2017/12/15

N2 - We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.

AB - We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.

KW - Nematic superconductors

KW - Pressure-enhanced superconductivity

KW - Superconducting topological insulators

KW - Topological superconductors

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DO - 10.1016/j.physc.2017.10.010

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VL - 543

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JO - Physica C: Superconductivity and its applications

JF - Physica C: Superconductivity and its applications

ER -

An increase in T_c under hydrostatic pressure in the superconducting doped topological insulator Nb_0.25Bi₂Se₃

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Keywords

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