Assessment of electron energy-loss spectroscopy below 5 eV in semiconductor materials in a VG STEM

Research output: Contribution to journalArticlepeer-review

Abstract

The possibilities of obtaining information about interband scattering processes from electron energy-loss spectra, taken in a VG601UX scanning transmission microscope, are investigated. With the help of precise simulations of the zero-loss peak it is feasible to process, extract and analyse data in the electron volt regime. The accuracy of the results is restricted predominantly by instrumental limitations. It is possible to extract band gaps of > 2eV (e,g. for GaN) correctly. In the case of band gaps between 1 and 2 eV (i.e. in GaAs), the uncertainty is larger, since the tail of the zero-loss peak interferes with the interband losses, and further refinements in the data analysis as well as the measurement techniques are discussed. 'Band-gap mapping' in the VG601UX can be carried out with a spatial resolution of a few nanometres.

Original languageEnglish
Pages (from-to)173-180
Number of pages8
JournalUltramicroscopy
Volume68
Issue number3
DOIs
Publication statusPublished - Jul 1997
Externally publishedYes

Fingerprint

Dive into the research topics of 'Assessment of electron energy-loss spectroscopy below 5 eV in semiconductor materials in a VG STEM'. Together they form a unique fingerprint.

Cite this