TY - JOUR
T1 - Band-gap engineering in TiOx and TiOx-Ni thin films by plasma-enhanced atomic layer deposition
T2 - Structural and optical insights
AU - Hernandez-Marquez, J. A.
AU - O’Neill, D.
AU - Snelgrove, M.
AU - Gonzalez-Jacquez, A. I.
AU - Solis-Canto, O.
AU - Tanabat, P.
AU - O’Connor, R.
AU - Farias-Mancilla, J. R.
AU - Elizalde-Galindo, J. T.
AU - Mani-Gonzalez, P. G.
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to The Materials Research Society 2025.
PY - 2025
Y1 - 2025
N2 - Rutile and anatase phases promote spatial charge separation which leads to a rise in photocatalytic activity. In addition, the fact that the thin film increases its photocatalytic activity when it is doped with another metal such as Ni is an important case of study. This doping technique enhances the wavelength threshold for initiating photocatalytic activity, rendering the photocatalytic effective at ~ 380 nm. TiO2 thin films were deposited through PE (plasma enhanced)-ALD with ~ 5 nm thickness by TDMAT and O2 plasma as precursors. Samples were characterized using GAXRD (grazing angle x-ray diffraction), Ellipsometry spectroscopy, and XPS (X-ray photoelectron spectroscopy).
AB - Rutile and anatase phases promote spatial charge separation which leads to a rise in photocatalytic activity. In addition, the fact that the thin film increases its photocatalytic activity when it is doped with another metal such as Ni is an important case of study. This doping technique enhances the wavelength threshold for initiating photocatalytic activity, rendering the photocatalytic effective at ~ 380 nm. TiO2 thin films were deposited through PE (plasma enhanced)-ALD with ~ 5 nm thickness by TDMAT and O2 plasma as precursors. Samples were characterized using GAXRD (grazing angle x-ray diffraction), Ellipsometry spectroscopy, and XPS (X-ray photoelectron spectroscopy).
KW - Atomic layer deposition
KW - Crystallographic structure
KW - Interface
KW - Optical properties
KW - Plasma deposition
UR - https://www.scopus.com/pages/publications/105025556992
U2 - 10.1557/s43579-025-00900-z
DO - 10.1557/s43579-025-00900-z
M3 - Article
AN - SCOPUS:105025556992
SN - 2159-6859
JO - MRS Communications
JF - MRS Communications
ER -