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Band-gap engineering in TiOx and TiOx-Ni thin films by plasma-enhanced atomic layer deposition: Structural and optical insights

  • J. A. Hernandez-Marquez
  • , D. O’Neill
  • , M. Snelgrove
  • , A. I. Gonzalez-Jacquez
  • , O. Solis-Canto
  • , P. Tanabat
  • , R. O’Connor
  • , J. R. Farias-Mancilla
  • , J. T. Elizalde-Galindo
  • , P. G. Mani-Gonzalez
  • Universidad Autónoma de Chihuahua
  • Dublin City University
  • University of Limerick
  • Centro de Investigacion en Materiales Avanzados
  • Kasetsart University

Research output: Contribution to journalArticlepeer-review

Abstract

Rutile and anatase phases promote spatial charge separation which leads to a rise in photocatalytic activity. In addition, the fact that the thin film increases its photocatalytic activity when it is doped with another metal such as Ni is an important case of study. This doping technique enhances the wavelength threshold for initiating photocatalytic activity, rendering the photocatalytic effective at ~ 380 nm. TiO2 thin films were deposited through PE (plasma enhanced)-ALD with ~ 5 nm thickness by TDMAT and O2 plasma as precursors. Samples were characterized using GAXRD (grazing angle x-ray diffraction), Ellipsometry spectroscopy, and XPS (X-ray photoelectron spectroscopy).

Original languageEnglish
Pages (from-to)505-511
Number of pages7
JournalMRS Communications
Volume16
Issue number2
DOIs
Publication statusPublished - Apr 2026
Externally publishedYes

Keywords

  • Atomic layer deposition
  • Crystallographic structure
  • Interface
  • Optical properties
  • Plasma deposition

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