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Band-gap shrinkage calculations and analytic model for strained bulk InGaAsP
Michael J. Connelly
Department of Electronics & Computer Engineering
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Engineering
Carrier Concentration
100%
Band Gap
100%
Semiconductor Optical Amplifier
66%
Cube Root
50%
Band Model
16%
Low-Temperature
16%
Amplifier
16%
Valence Band
16%
Compressive Strain
16%
Simple Model
16%
Band Structure
16%
Tensile Strain
16%
Optical Amplifier
16%
Square Root
16%
Lasing Wavelength
16%
Material Constant
16%
Current Drive
16%
Fitting Parameter
16%
Optical Power
16%
Mathematical Model
16%
Conduction Band
16%
Earth and Planetary Sciences
Light Amplifier
100%
Lasing
20%