Cessation of porous layer growth in n-InP anodised in KOH

Robert P. Lynch, Nathan Quill, Colm O'Dwyer, Monika Dornhege, Harm H. Rotermund, D. Noel Buckley

Research output: Contribution to journalConference articlepeer-review

Abstract

Anodisation of n-InP in KOH results in the formation of porous layers with a finite thickness. We propose the reason for the cessation of porous etching is the formation of insoluble precipitates within the pores. Electron micrographs of mature porous layers show significant precipitates within the porous structure. An in-situ microscopy study of the surface of InP electrode during anodisation reveals the formation of a layer on the surface. This layer emerges from a point on the surface and quickly spreads across it. A likely source of this layer is the spreading of precipitation from the etch-products saturated solution within the porous layer. However, as we explain, once a complete porous layer has formed, there should be no significant increase in mass transport requirements through the porous network, leaving the exact mechanism of the precipitation unclear.

Original languageEnglish
Pages (from-to)65-79
Number of pages15
JournalECS Transactions
Volume53
Issue number6
DOIs
Publication statusPublished - 2013
EventProcesses at the Semiconductor Solution Interface 5, PSSI 2013 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 12 May 201316 May 2013

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