Abstract
The structural role of Gallium (Ga) is investigated when substituted for Zinc (Zn) in a 0.42SiO2-0.40-xZnO-0.10Na2O-0.08CaO glass series, (where x = 0.08). Each starting material was amorphous, and the network connectivity (NC) was calculated assuming Ga acts as both a network modifier (1.23), and also as a network former. Assuming a network forming role for Ga the NC increased with increasing Ga concentration throughout the glass series (Control 1.23, TGa-1 2.32 and TGa-2 3.00). X-ray photoelectron spectroscopy confirmed both composition and correlated NC predictions. Raman spectroscopy was employed to investigate Q-structure and found that a shift in wavenumbers occurred as the Ga concentration increased through the glass series, from 933, 951 to 960 cm-1. Magic angle spinning nuclear magnetic resonance determined a chemical shift from -73, -75 to -77 ppm as the Ga concentration increased, supporting Raman data. These results suggest that Ga acts predominantly as a network former in this particular Zn-silicate system.
| Original language | English |
|---|---|
| Pages (from-to) | 3999-4007 |
| Number of pages | 9 |
| Journal | Journal of Materials Science |
| Volume | 48 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Jun 2013 |
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