Abstract
The development of a cost-effective Si based platform on which III-V's can be grown is of great interest. This work investigates the morphology of gallium phosphide (GaP) films grown on {111} silicon (Si) substrates by means of liquid phase epitaxy in a tin (Sn) - based solvent bath. Two types of single-crystal {111} Si substrates were used; the first type was oriented exactly along the 〈111〉 surface (no-miscut) and the second was miscut by 4°. The growth rate of the GaP films was found to be markedly different for the two types of substrates; the GaP films on the miscut Si substrate grew ∼4 times faster than those on the no-miscut substrate. The GaP films grew epitaxially on both types of substrates, but contained Si and Sn as inclusions. In the case of the no-miscut substrate, a number of large Sn particles were incorporated at the GaP/Si interface. As a result, these interfacial Sn particles affected the strain state of the GaP films dramatically, which, in turn, manifested itself in the form of a duplex microstructure that consists of strained and strain-free regions.
Original language | English |
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Pages (from-to) | 18626-18634 |
Number of pages | 9 |
Journal | ACS Applied Materials and Interfaces |
Volume | 6 |
Issue number | 21 |
DOIs | |
Publication status | Published - 12 Nov 2014 |
Keywords
- (S)TEM
- III-V compound semiconductor materials
- liquid phase epitaxy
- XRD