Characterization of the microstructure of GaP films grown on {111} Si by liquid phase epitaxy

Susan R. Huang, Xuesong Lu, Allen Barnett, Robert L. Opila, Vishnu Mogili, David A. Tanner, Shohei Nakahara

Research output: Contribution to journalArticlepeer-review

Abstract

The development of a cost-effective Si based platform on which III-V's can be grown is of great interest. This work investigates the morphology of gallium phosphide (GaP) films grown on {111} silicon (Si) substrates by means of liquid phase epitaxy in a tin (Sn) - based solvent bath. Two types of single-crystal {111} Si substrates were used; the first type was oriented exactly along the 〈111〉 surface (no-miscut) and the second was miscut by 4°. The growth rate of the GaP films was found to be markedly different for the two types of substrates; the GaP films on the miscut Si substrate grew ∼4 times faster than those on the no-miscut substrate. The GaP films grew epitaxially on both types of substrates, but contained Si and Sn as inclusions. In the case of the no-miscut substrate, a number of large Sn particles were incorporated at the GaP/Si interface. As a result, these interfacial Sn particles affected the strain state of the GaP films dramatically, which, in turn, manifested itself in the form of a duplex microstructure that consists of strained and strain-free regions.

Original languageEnglish
Pages (from-to)18626-18634
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number21
DOIs
Publication statusPublished - 12 Nov 2014

Keywords

  • (S)TEM
  • III-V compound semiconductor materials
  • liquid phase epitaxy
  • XRD

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