Abstract
In this study we have used high resolution parallel electron energy loss spectroscopy (PEELS) and X-ray excited optical luminescence (XEOL) to investigate the chemical nature of the luminescence centre in fresh and aged porous silicon. We find that regardless of the non-stoichiometric oxides which were observed by PEELS in our fresh porous silicon layers, Si-Si bonded material is involved in the luminescence process. However, in the case of aged porous silicon both Si-Si and Si-O bonded material are involved.
Original language | English |
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Pages (from-to) | 408-412 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 102 |
DOIs | |
Publication status | Published - Aug 1996 |
Externally published | Yes |