Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

A. Gutiérrez-Sosa; U. Bangert; C. J. Fall; R. Jones; A. T. Blumenau; P. R. Briddon; T. Frauenheim

doi:10.1201/9781351074636

Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

A. Gutiérrez-Sosa, U. Bangert, C. J. Fall, R. Jones, A. T. Blumenau, P. R. Briddon, T. Frauenheim

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	33-36
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
Publication status	Published - 1 Jan 2018
Externally published	Yes

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10.1201/9781351074636

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title = "Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors",

abstract = "Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.",

author = "A. Guti{\'e}rrez-Sosa and U. Bangert and Fall, {C. J.} and R. Jones and Blumenau, {A. T.} and Briddon, {P. R.} and T. Frauenheim",

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T1 - Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

AU - Gutiérrez-Sosa, A.

AU - Bangert, U.

AU - Fall, C. J.

AU - Jones, R.

AU - Blumenau, A. T.

AU - Briddon, P. R.

AU - Frauenheim, T.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.

AB - Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.

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M3 - Chapter

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SN - 9781315895536

SP - 33

EP - 36

BT - Microscopy of Semiconducting Materials 2003

PB - CRC Press

ER -

Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

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