Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

A. Gutiérrez-Sosa; U. Bangert; C. J. Fall; R. Jpnes; A. T. Blumenau; P. R. Briddon; T. Frauenheim

Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

A. Gutiérrez-Sosa, U. Bangert, C. J. Fall, R. Jpnes, A. T. Blumenau, P. R. Briddon, T. Frauenheim

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Design and Nature
Volume	6
Publication status	Published - 2004
Externally published	Yes
Event	Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004

Cite this

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title = "Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors",

abstract = "Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.",

author = "A. Guti{\'e}rrez-Sosa and U. Bangert and Fall, {C. J.} and R. Jpnes and Blumenau, {A. T.} and Briddon, {P. R.} and T. Frauenheim",

year = "2004",

language = "English",

volume = "6",

pages = "33--36",

journal = "Design and Nature",

issn = "1478-0585",

note = "Design and Nature II: Comparing Design in Nature with Science and Engineering ; Conference date: 28-06-2004 Through 30-06-2004",

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TY - JOUR

T1 - Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

AU - Gutiérrez-Sosa, A.

AU - Bangert, U.

AU - Fall, C. J.

AU - Jpnes, R.

AU - Blumenau, A. T.

AU - Briddon, P. R.

AU - Frauenheim, T.

PY - 2004

Y1 - 2004

N2 - Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.

AB - Electron energy loss spectroscopy (EELS) is a technique with the ability to probe the electrical activity of extended defects in semiconductors. In a cold field emission gun scanning transmission electron microscope (FEG STEM) under carefully chosen experimental conditions it is possible to detect states due to extended defects in wide band gap materials and these can be compared directly with density functional theory (DFT) calculations of the energy loss. We show how the spectra acquired from dislocations in GaN and diamond are related to the results of the first principle calculations.

UR - http://www.scopus.com/inward/record.url?scp=7744220229&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:7744220229

SN - 1478-0585

VL - 6

SP - 33

EP - 36

JO - Design and Nature

JF - Design and Nature

T2 - Design and Nature II: Comparing Design in Nature with Science and Engineering

Y2 - 28 June 2004 through 30 June 2004

ER -

Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors

Abstract

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