TY - GEN
T1 - Combined super-STEM imaging, EEL and PL spectroscopy of un-doped and Er doped SRSO on Si
AU - Crowe, Iain F.
AU - Roschuk, Tyler
AU - Bangert, Ursel
AU - Sherliker, Ben
AU - Halsall, Matthew P.
AU - Knights, Andrew
AU - Mascher, Peter
PY - 2008
Y1 - 2008
N2 - We present a combined analysis of Scanning Transmission Electron Microscopy (STEM) imaging and Electron Energy Loss spectroscopy (EELs) of silicon-rich-silicon- oxide (SRSO) thin film on silicon, grown by Plasma Enhanced Chemical Vapour Deposition (PECVD). For un-doped samples, strong room temperature luminescence at ∼1.6eV (780nm) is observed, which we ascribe, by way of plasmon intensity mapping and 'chemical fingerprinting' to phase segregated, highly crystalline, silicon-rich nano-clusters embedded in an amorphous-silicon dioxide (a-SiO2) matrix. For samples doped with increasing concentrations of Er, a quenching of the 1.6eV line, concurrent with the emergence of a second emission with increasing intensity at ∼0.8eV (1535nm) is observed. This is attributed to a rapid and efficient, indirect nano-crystal mediated excitation of the Er.
AB - We present a combined analysis of Scanning Transmission Electron Microscopy (STEM) imaging and Electron Energy Loss spectroscopy (EELs) of silicon-rich-silicon- oxide (SRSO) thin film on silicon, grown by Plasma Enhanced Chemical Vapour Deposition (PECVD). For un-doped samples, strong room temperature luminescence at ∼1.6eV (780nm) is observed, which we ascribe, by way of plasmon intensity mapping and 'chemical fingerprinting' to phase segregated, highly crystalline, silicon-rich nano-clusters embedded in an amorphous-silicon dioxide (a-SiO2) matrix. For samples doped with increasing concentrations of Er, a quenching of the 1.6eV line, concurrent with the emergence of a second emission with increasing intensity at ∼0.8eV (1535nm) is observed. This is attributed to a rapid and efficient, indirect nano-crystal mediated excitation of the Er.
KW - EELs
KW - Nano-crystalline silicon
KW - PECVD
KW - STEM
UR - http://www.scopus.com/inward/record.url?scp=64849095403&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2008.4802117
DO - 10.1109/COMMAD.2008.4802117
M3 - Conference contribution
AN - SCOPUS:64849095403
SN - 9781424427178
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 163
EP - 165
BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Y2 - 28 July 2008 through 1 August 2008
ER -