Composition and structure of hafnia films on silicon

T. P. Smirnova; V. V. Kaichev; L. V. Yakovkina; V. I. Kosyakov; S. A. Beloshapkin; F. A. Kuznetsov; M. S. Lebedev; V. A. Gritsenko

doi:10.1134/S0020168508090124

Composition and structure of hafnia films on silicon

T. P. Smirnova, V. V. Kaichev, L. V. Yakovkina, V. I. Kosyakov, S. A. Beloshapkin, F. A. Kuznetsov, M. S. Lebedev, V. A. Gritsenko

Bernal Institute

Research output: Contribution to journal › Article › peer-review

Abstract

Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO ₂ deposition onto silicon, the native oxide reacts with the HfO ₂ deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO ₂ (1.9-2.0) and SiO ₂ (1.46). Thermodynamic analysis of the Si-SiO ₂-HfO ₂-Hf system shows that Si is in equilibrium with Si/HfO _{2 - y} only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO ₄/HfO _{2 - y}.

Original language	English
Pages (from-to)	965-970
Number of pages	6
Journal	Inorganic Materials
Volume	44
Issue number	9
DOIs	https://doi.org/10.1134/S0020168508090124
Publication status	Published - Sep 2008

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title = "Composition and structure of hafnia films on silicon",

abstract = "Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9-2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2-HfO 2-Hf system shows that Si is in equilibrium with Si/HfO 2 - y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4/HfO 2 - y.",

author = "Smirnova, {T. P.} and Kaichev, {V. V.} and Yakovkina, {L. V.} and Kosyakov, {V. I.} and Beloshapkin, {S. A.} and Kuznetsov, {F. A.} and Lebedev, {M. S.} and Gritsenko, {V. A.}",

year = "2008",

month = sep,

doi = "10.1134/S0020168508090124",

language = "English",

volume = "44",

pages = "965--970",

journal = "Inorganic Materials",

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TY - JOUR

T1 - Composition and structure of hafnia films on silicon

AU - Smirnova, T. P.

AU - Kaichev, V. V.

AU - Yakovkina, L. V.

AU - Kosyakov, V. I.

AU - Beloshapkin, S. A.

AU - Kuznetsov, F. A.

AU - Lebedev, M. S.

AU - Gritsenko, V. A.

PY - 2008/9

Y1 - 2008/9

N2 - Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9-2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2-HfO 2-Hf system shows that Si is in equilibrium with Si/HfO 2 - y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4/HfO 2 - y.

AB - Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9-2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2-HfO 2-Hf system shows that Si is in equilibrium with Si/HfO 2 - y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4/HfO 2 - y.

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U2 - 10.1134/S0020168508090124

DO - 10.1134/S0020168508090124

M3 - Article

AN - SCOPUS:50849105104

SN - 0020-1685

VL - 44

SP - 965

EP - 970

JO - Inorganic Materials

JF - Inorganic Materials

IS - 9

ER -

Composition and structure of hafnia films on silicon

Abstract

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