Composition and structure of hafnia films on silicon

T. P. Smirnova; V. V. Kaichev; L. V. Yakovkina; V. I. Kosyakov; S. A. Beloshapkin; F. A. Kuznetsov; M. S. Lebedev; V. A. Gritsenko

doi:10.1134/S0020168508090124

Composition and structure of hafnia films on silicon

T. P. Smirnova
, V. V. Kaichev
, L. V. Yakovkina
, V. I. Kosyakov
, S. A. Beloshapkin
, F. A. Kuznetsov
, M. S. Lebedev
, V. A. Gritsenko

Research output: Contribution to journal › Article › peer-review

Abstract

Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO ₂ deposition onto silicon, the native oxide reacts with the HfO ₂ deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO ₂ (1.9-2.0) and SiO ₂ (1.46). Thermodynamic analysis of the Si-SiO ₂-HfO ₂-Hf system shows that Si is in equilibrium with Si/HfO _{2 - y} only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO ₄/HfO _{2 - y}.

Original language	English
Pages (from-to)	965-970
Number of pages	6
Journal	Inorganic Materials
Volume	44
Issue number	9
DOIs	https://doi.org/10.1134/S0020168508090124
Publication status	Published - Sep 2008

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title = "Composition and structure of hafnia films on silicon",

abstract = "Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9-2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2-HfO 2-Hf system shows that Si is in equilibrium with Si/HfO 2 - y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4/HfO 2 - y.",

author = "Smirnova, \{T. P.\} and Kaichev, \{V. V.\} and Yakovkina, \{L. V.\} and Kosyakov, \{V. I.\} and Beloshapkin, \{S. A.\} and Kuznetsov, \{F. A.\} and Lebedev, \{M. S.\} and Gritsenko, \{V. A.\}",

year = "2008",

month = sep,

doi = "10.1134/S0020168508090124",

language = "English",

volume = "44",

pages = "965--970",

journal = "Inorganic Materials",

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number = "9",

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TY - JOUR

T1 - Composition and structure of hafnia films on silicon

AU - Smirnova, T. P.

AU - Kaichev, V. V.

AU - Yakovkina, L. V.

AU - Kosyakov, V. I.

AU - Beloshapkin, S. A.

AU - Kuznetsov, F. A.

AU - Lebedev, M. S.

AU - Gritsenko, V. A.

PY - 2008/9

Y1 - 2008/9

N2 - Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9-2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2-HfO 2-Hf system shows that Si is in equilibrium with Si/HfO 2 - y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4/HfO 2 - y.

AB - Ellipsometry, electron microscopy, and x-ray photoelectron spectroscopy data indicate that, during HfO 2 deposition onto silicon, the native oxide reacts with the HfO 2 deposit to form an amorphous intermediate layer which differs in refractive index (≃1.6) from both HfO 2 (1.9-2.0) and SiO 2 (1.46). Thermodynamic analysis of the Si-SiO 2-HfO 2-Hf system shows that Si is in equilibrium with Si/HfO 2 - y only at low oxygen pressures. Starting at a certain oxygen pressure (equivalent to the formation of a native oxide layer), the equilibrium phase assemblage is Si/HfSiO 4/HfO 2 - y.

UR - https://www.scopus.com/pages/publications/50849105104

U2 - 10.1134/S0020168508090124

DO - 10.1134/S0020168508090124

M3 - Article

AN - SCOPUS:50849105104

SN - 0020-1685

VL - 44

SP - 965

EP - 970

JO - Inorganic Materials

JF - Inorganic Materials

IS - 9

ER -

Composition and structure of hafnia films on silicon

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