Crystallization and Properties of a Si‐Y‐Al‐O‐N Glass‐Ceramic

Jean‐Louis ‐L Besson; Dominique Billieres; Tanguy Rouxel; Paul Goursat; Robert Flynn; Stuart Hampshire

doi:10.1111/j.1151-2916.1993.tb08340.x

Crystallization and Properties of a Si‐Y‐Al‐O‐N Glass‐Ceramic

Jean‐Louis ‐L Besson
, Dominique Billieres
, Tanguy Rouxel
, Paul Goursat
, Robert Flynn
, Stuart Hampshire

Retired Staff

Research output: Contribution to journal › Article › peer-review

Abstract

Glasses have been prepared in the Si ‐Y‐Al O‐N system by melting mixtures of silica, alumina, yttria, and silicon nitride. One particular glass containing 17 equiv% N has been investigated to Observe the crystallization at temperatures in the range 1050^o‐1300^oC. The major crystalline phase observed is Y₂Si₂O₇, existing as the α form below 1200^oC and the β form above this temperature. Properties of the glass‐ceramic, including thermal expansion coefficient, hardness, electrical resistivity, and creep have been assessed.

Original language	English
Pages (from-to)	2103-2105
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	76
Issue number	8
DOIs	https://doi.org/10.1111/j.1151-2916.1993.tb08340.x
Publication status	Published - Aug 1993

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10.1111/j.1151-2916.1993.tb08340.x

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@article{53dc8ab4af1e438ba0ceea751af0361d,

title = "Crystallization and Properties of a Si‐Y‐Al‐O‐N Glass‐Ceramic",

abstract = "Glasses have been prepared in the Si ‐Y‐Al O‐N system by melting mixtures of silica, alumina, yttria, and silicon nitride. One particular glass containing 17 equiv\% N has been investigated to Observe the crystallization at temperatures in the range 1050o‐1300oC. The major crystalline phase observed is Y2Si2O7, existing as the α form below 1200oC and the β form above this temperature. Properties of the glass‐ceramic, including thermal expansion coefficient, hardness, electrical resistivity, and creep have been assessed.",

author = "Besson, \{Jean‐Louis ‐L\} and Dominique Billieres and Tanguy Rouxel and Paul Goursat and Robert Flynn and Stuart Hampshire",

year = "1993",

month = aug,

doi = "10.1111/j.1151-2916.1993.tb08340.x",

language = "English",

volume = "76",

pages = "2103--2105",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

number = "8",

}

TY - JOUR

T1 - Crystallization and Properties of a Si‐Y‐Al‐O‐N Glass‐Ceramic

AU - Besson, Jean‐Louis ‐L

AU - Billieres, Dominique

AU - Rouxel, Tanguy

AU - Goursat, Paul

AU - Flynn, Robert

AU - Hampshire, Stuart

PY - 1993/8

Y1 - 1993/8

N2 - Glasses have been prepared in the Si ‐Y‐Al O‐N system by melting mixtures of silica, alumina, yttria, and silicon nitride. One particular glass containing 17 equiv% N has been investigated to Observe the crystallization at temperatures in the range 1050o‐1300oC. The major crystalline phase observed is Y2Si2O7, existing as the α form below 1200oC and the β form above this temperature. Properties of the glass‐ceramic, including thermal expansion coefficient, hardness, electrical resistivity, and creep have been assessed.

AB - Glasses have been prepared in the Si ‐Y‐Al O‐N system by melting mixtures of silica, alumina, yttria, and silicon nitride. One particular glass containing 17 equiv% N has been investigated to Observe the crystallization at temperatures in the range 1050o‐1300oC. The major crystalline phase observed is Y2Si2O7, existing as the α form below 1200oC and the β form above this temperature. Properties of the glass‐ceramic, including thermal expansion coefficient, hardness, electrical resistivity, and creep have been assessed.

UR - https://www.scopus.com/pages/publications/0027642260

U2 - 10.1111/j.1151-2916.1993.tb08340.x

DO - 10.1111/j.1151-2916.1993.tb08340.x

M3 - Article

AN - SCOPUS:0027642260

SN - 0002-7820

VL - 76

SP - 2103

EP - 2105

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 8

ER -

Crystallization and Properties of a Si‐Y‐Al‐O‐N Glass‐Ceramic

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