Damage effects of ion atom beam milling on MNOS (Al/Si3N4/SiO2/Si) capacitors

U. Bangert; J. Belson; I. H. Wilson

doi:10.1016/0168-583X(84)90093-4

Damage effects of ion atom beam milling on MNOS (Al/Si₃N₄/SiO₂/Si) capacitors

U. Bangert, J. Belson, I. H. Wilson

Retired Staff

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

Low energy argon ion and atom beams produced by saddle field sources have been used to study changes in CVD Si₃N₄/SiO₂/Si structures after bombardment of the bare nitride at a particle energy of 2.9 keV. Interface state densities N_st and flatband voltages V_FB were extracted from high frequency (1.3 MHz) and quasi-static C-V curves. Bombardment was found to induce an increase in N_st and positive and negative charge storage associated with the nitride (or the nitride/oxide interface). The effect was more pronounced under ion bombardment. On the supposition that displacement damage is similar for ion and atom bombardments the differences in charge storage are interpreted in terms of enhanced trapping under the field associated with ion bombardment.

Original language	English
Pages (from-to)	370-373
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	1
Issue number	2-3
DOIs	https://doi.org/10.1016/0168-583X(84)90093-4
Publication status	Published - Feb 1984

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abstract = "Low energy argon ion and atom beams produced by saddle field sources have been used to study changes in CVD Si3N4/SiO2/Si structures after bombardment of the bare nitride at a particle energy of 2.9 keV. Interface state densities Nst and flatband voltages VFB were extracted from high frequency (1.3 MHz) and quasi-static C-V curves. Bombardment was found to induce an increase in Nst and positive and negative charge storage associated with the nitride (or the nitride/oxide interface). The effect was more pronounced under ion bombardment. On the supposition that displacement damage is similar for ion and atom bombardments the differences in charge storage are interpreted in terms of enhanced trapping under the field associated with ion bombardment.",

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T1 - Damage effects of ion atom beam milling on MNOS (Al/Si3N4/SiO2/Si) capacitors

AU - Bangert, U.

AU - Belson, J.

AU - Wilson, I. H.

PY - 1984/2

Y1 - 1984/2

N2 - Low energy argon ion and atom beams produced by saddle field sources have been used to study changes in CVD Si3N4/SiO2/Si structures after bombardment of the bare nitride at a particle energy of 2.9 keV. Interface state densities Nst and flatband voltages VFB were extracted from high frequency (1.3 MHz) and quasi-static C-V curves. Bombardment was found to induce an increase in Nst and positive and negative charge storage associated with the nitride (or the nitride/oxide interface). The effect was more pronounced under ion bombardment. On the supposition that displacement damage is similar for ion and atom bombardments the differences in charge storage are interpreted in terms of enhanced trapping under the field associated with ion bombardment.

AB - Low energy argon ion and atom beams produced by saddle field sources have been used to study changes in CVD Si3N4/SiO2/Si structures after bombardment of the bare nitride at a particle energy of 2.9 keV. Interface state densities Nst and flatband voltages VFB were extracted from high frequency (1.3 MHz) and quasi-static C-V curves. Bombardment was found to induce an increase in Nst and positive and negative charge storage associated with the nitride (or the nitride/oxide interface). The effect was more pronounced under ion bombardment. On the supposition that displacement damage is similar for ion and atom bombardments the differences in charge storage are interpreted in terms of enhanced trapping under the field associated with ion bombardment.

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ER -

Damage effects of ion atom beam milling on MNOS (Al/Si₃N₄/SiO₂/Si) capacitors

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