Deconvolution of the potential and time dependence of electrochemical porous semiconductor formation

N. Quill, C. O'Dwyer, R. Lynch, D. N. Buckley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A layer of porous InP is grown beneath a thin dense surface layer when n-InP electrodes are anodized to sufficiently high potentials in aqueous KOH solutions. The shape of the linear sweep (LSV) or the cyclic voltammogram (CV) is dependent on carrier concentration. A technique is presented to deconvolute the effects of potential and time on a CV. The results obtained from this technique are used to explain the shape of the anodic current response and its relation to porous layer formation. The accuracy of the deconvolution technique is then tested by comparison to experimental results.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
PublisherElectrochemical Society Inc.
Pages295-304
Number of pages10
Edition3
ISBN (Electronic)9781607680611
ISBN (Print)9781566777117
DOIs
Publication statusPublished - 2009
Event50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number3
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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