Dynamic modeling of slow-light in a semiconductor optical amplifier including the effects of forced coherent population oscillations by bias current modulation

The slow light effect in SOAs has many applications in microwave photonics such as phase shifting and filtering. Models are needed to predict slow light in SOAs and its dependence on the bias current, optical power and modulation index. In this paper we predict the slow light characteristics of a tensile-strained SOA by using a detailed time-domain model. The model includes full band-structure based calculations of the material gain, bimolecular recombination and spontaneous emission, a carrier density rate equation and travelling wave equations for the input signal and amplified spontaneous emission. The slow light effect is caused by coherent population oscillations, whereby beating between the spectral components of an amplitude modulated lightwave causes carrier density oscillations at the beat frequency, leading to changes in the group velocity. The resulting beat signal at the SOA output after photodetection, is phase shifted relative to the SOA input beat signal. The phase shift can be adjusted by controlling the optical power and bias current. However the beat signal gain is low at low frequencies, leading to a poor beat signal output signal-to-noise ratio. If the optical input and SOA drive current are simultaneously modulated, this leads to forced population oscillations that greatly enhance the low frequency beat signal gain. The model is used to determine the improvement in gain and phase response and its dependency on the optical power, bias current and modulation index. Model predictions show good agreement with experimental trends reported in the literature.