Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films

A. Arshak; S. M. Zleetni; K. Arshak; J. Harris

doi:10.1109/NANO.2001.966426

Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films

A. Arshak
, S. M. Zleetni
, K. Arshak
, J. Harris

University of Limerick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The dosimetry properties of thermally evaporated Copper Phthalocyanine (CuPc) thin films were investigated. The conduction mechanism of the asdeposited films was found to be space-charge-limited and their relative permittivity was within the range reported by others [1,2, 3, 4]. The Poole-Frenkel effect became more dominant for the irradiated samples and they displayed large increase in permittivity and colour centre density, although the energies of their optical band gap and trapping levels did not change. The observed linear relationship between the absorbance at 615 nm and the γ-radiation doses validated the use of CuPc as an optical sensor dosimeter especially for low radiation doses. Samples showed a higher radiation tolerance after being annealed for one hour at a temperature of only 323 K. Annealing also restored their initial electrical and optical properties.

Original language	English
Title of host publication	Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Publisher	IEEE Computer Society
Pages	238-242
Number of pages	5
ISBN (Electronic)	0780372158
DOIs	https://doi.org/10.1109/NANO.2001.966426
Publication status	Published - 2001
Event	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States Duration: 28 Oct 2001 → 30 Oct 2001

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2001-January
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Country/Territory	United States
City	Maui
Period	28/10/01 → 30/10/01

Access to Document

10.1109/NANO.2001.966426

Cite this

Arshak, A., Zleetni, S. M., Arshak, K., & Harris, J. (2001). Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films. In Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 (pp. 238-242). Article 966426 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2001-January). IEEE Computer Society. https://doi.org/10.1109/NANO.2001.966426

@inproceedings{91e216c7dcaf44d5ba47eaf01126a286,

title = "Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films",

abstract = "The dosimetry properties of thermally evaporated Copper Phthalocyanine (CuPc) thin films were investigated. The conduction mechanism of the asdeposited films was found to be space-charge-limited and their relative permittivity was within the range reported by others [1,2, 3, 4]. The Poole-Frenkel effect became more dominant for the irradiated samples and they displayed large increase in permittivity and colour centre density, although the energies of their optical band gap and trapping levels did not change. The observed linear relationship between the absorbance at 615 nm and the γ-radiation doses validated the use of CuPc as an optical sensor dosimeter especially for low radiation doses. Samples showed a higher radiation tolerance after being annealed for one hour at a temperature of only 323 K. Annealing also restored their initial electrical and optical properties.",

author = "A. Arshak and Zleetni, \{S. M.\} and K. Arshak and J. Harris",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 ; Conference date: 28-10-2001 Through 30-10-2001",

year = "2001",

doi = "10.1109/NANO.2001.966426",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "IEEE Computer Society",

pages = "238--242",

booktitle = "Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001",

}

Arshak, A, Zleetni, SM, Arshak, K & Harris, J 2001, Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films. in Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001., 966426, Proceedings of the IEEE Conference on Nanotechnology, vol. 2001-January, IEEE Computer Society, pp. 238-242, 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001, Maui, United States, 28/10/01. https://doi.org/10.1109/NANO.2001.966426

Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films. / Arshak, A.; Zleetni, S. M.; Arshak, K. et al.
Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001. IEEE Computer Society, 2001. p. 238-242 966426 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2001-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films

AU - Arshak, A.

AU - Zleetni, S. M.

AU - Arshak, K.

AU - Harris, J.

PY - 2001

Y1 - 2001

N2 - The dosimetry properties of thermally evaporated Copper Phthalocyanine (CuPc) thin films were investigated. The conduction mechanism of the asdeposited films was found to be space-charge-limited and their relative permittivity was within the range reported by others [1,2, 3, 4]. The Poole-Frenkel effect became more dominant for the irradiated samples and they displayed large increase in permittivity and colour centre density, although the energies of their optical band gap and trapping levels did not change. The observed linear relationship between the absorbance at 615 nm and the γ-radiation doses validated the use of CuPc as an optical sensor dosimeter especially for low radiation doses. Samples showed a higher radiation tolerance after being annealed for one hour at a temperature of only 323 K. Annealing also restored their initial electrical and optical properties.

AB - The dosimetry properties of thermally evaporated Copper Phthalocyanine (CuPc) thin films were investigated. The conduction mechanism of the asdeposited films was found to be space-charge-limited and their relative permittivity was within the range reported by others [1,2, 3, 4]. The Poole-Frenkel effect became more dominant for the irradiated samples and they displayed large increase in permittivity and colour centre density, although the energies of their optical band gap and trapping levels did not change. The observed linear relationship between the absorbance at 615 nm and the γ-radiation doses validated the use of CuPc as an optical sensor dosimeter especially for low radiation doses. Samples showed a higher radiation tolerance after being annealed for one hour at a temperature of only 323 K. Annealing also restored their initial electrical and optical properties.

UR - https://www.scopus.com/pages/publications/84949229660

U2 - 10.1109/NANO.2001.966426

DO - 10.1109/NANO.2001.966426

M3 - Conference contribution

AN - SCOPUS:84949229660

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 238

EP - 242

BT - Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001

PB - IEEE Computer Society

T2 - 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001

Y2 - 28 October 2001 through 30 October 2001

ER -

Arshak A, Zleetni SM, Arshak K, Harris J. Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films. In Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001. IEEE Computer Society. 2001. p. 238-242. 966426. (Proceedings of the IEEE Conference on Nanotechnology). doi: 10.1109/NANO.2001.966426

Effect of γ-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this