Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
- N. Duxbury
- , P. Dawson
- , U. Bangert
- , E. J. Thrush
- , W. Van Der Stricht
- , K. Jacobs
- , I. Moerman
- University of Manchester
- Thomas Swan and Co. Ltd
- Ghent University
Research output: Contribution to journal › Article › peer-review