TY - GEN
T1 - Electrochemical formation of ordered pore arrays in InP in KCl
AU - Quill, N.
AU - Lynch, R. P.
AU - O'Dwyer, C.
AU - Buckley, D. N.
PY - 2013
Y1 - 2013
N2 - Micro and Nanoelectronics Centre, Tyndall National Institute, Lee Maltings, Cork, Ireland Pores are formed electrochemically in n-InP in KCl electrolytes with concentrations of 2 mol dm-3 or greater. The pore morphology is similar to what is seen in other halide-based electrolytes. At low potentials, crystallographically oriented (CO) pores are formed. At higher potentials, current-line oriented (CLO) pores are formed. Crystallographically oriented pore walls are observed for both pore morphologies. When formed at a constant current, potential oscillations are observed which have been correlated to oscillations in the pore width. The CLO pore wall smoothness and overall uniformity increase as KCl concentration is increased. The porous structures formed in KCl compare favourably with those formed in the more acidic or alkaline electrolytes that are typically used to form these structures.
AB - Micro and Nanoelectronics Centre, Tyndall National Institute, Lee Maltings, Cork, Ireland Pores are formed electrochemically in n-InP in KCl electrolytes with concentrations of 2 mol dm-3 or greater. The pore morphology is similar to what is seen in other halide-based electrolytes. At low potentials, crystallographically oriented (CO) pores are formed. At higher potentials, current-line oriented (CLO) pores are formed. Crystallographically oriented pore walls are observed for both pore morphologies. When formed at a constant current, potential oscillations are observed which have been correlated to oscillations in the pore width. The CLO pore wall smoothness and overall uniformity increase as KCl concentration is increased. The porous structures formed in KCl compare favourably with those formed in the more acidic or alkaline electrolytes that are typically used to form these structures.
UR - http://www.scopus.com/inward/record.url?scp=84882990880&partnerID=8YFLogxK
U2 - 10.1149/05006.0377ecst
DO - 10.1149/05006.0377ecst
M3 - Conference contribution
AN - SCOPUS:84882990880
SN - 9781607683544
T3 - ECS Transactions
SP - 377
EP - 392
BT - Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
PB - Electrochemical Society Inc.
T2 - Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Y2 - 7 October 2012 through 12 October 2012
ER -