Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system

M. P. Halsall; A. D.F. Dunbar; U. Bangert

doi:10.1063/1.369469

Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system

M. P. Halsall, A. D.F. Dunbar, U. Bangert

University of Manchester

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Abstract

We report a systematic study of the effect of substrate orientation on the ordering in the AlGaInP system, including the Al_0.52In_0.48P lattice-matched ternary case. Four AlGaInP/GaAs/AlInP samples were grown by metalorganic vapor phase epitaxy under identical growth conditions on [100] substrates orientated 0°, 2°, 10° and 15° either towards the [110] or the [111] axis. The ordering in both the AlInP and the AlGaInP layers was studied by electron diffraction and the Raman scattering technique. The tendency for ordering decreased with increasing misorientation and is less for (Al_xGa_1-x)_0.52In_0.48P than for AlInP. The AlInP was found to spontaneously order even when grown after a completely disordered AlGaInP layer. The Raman results show features correlated to the electron diffraction results and hence we conclude that this technique constitutes a reliable nondestructive means of characterizing this system.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Journal of Applied Physics
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.369469
Publication status	Published - 1999
Externally published	Yes

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title = "Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system",

abstract = "We report a systematic study of the effect of substrate orientation on the ordering in the AlGaInP system, including the Al0.52In0.48P lattice-matched ternary case. Four AlGaInP/GaAs/AlInP samples were grown by metalorganic vapor phase epitaxy under identical growth conditions on [100] substrates orientated 0°, 2°, 10° and 15° either towards the [110] or the [111] axis. The ordering in both the AlInP and the AlGaInP layers was studied by electron diffraction and the Raman scattering technique. The tendency for ordering decreased with increasing misorientation and is less for (AlxGa1-x)0.52In0.48P than for AlInP. The AlInP was found to spontaneously order even when grown after a completely disordered AlGaInP layer. The Raman results show features correlated to the electron diffraction results and hence we conclude that this technique constitutes a reliable nondestructive means of characterizing this system.",

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T1 - Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system

AU - Halsall, M. P.

AU - Dunbar, A. D.F.

AU - Bangert, U.

PY - 1999

Y1 - 1999

N2 - We report a systematic study of the effect of substrate orientation on the ordering in the AlGaInP system, including the Al0.52In0.48P lattice-matched ternary case. Four AlGaInP/GaAs/AlInP samples were grown by metalorganic vapor phase epitaxy under identical growth conditions on [100] substrates orientated 0°, 2°, 10° and 15° either towards the [110] or the [111] axis. The ordering in both the AlInP and the AlGaInP layers was studied by electron diffraction and the Raman scattering technique. The tendency for ordering decreased with increasing misorientation and is less for (AlxGa1-x)0.52In0.48P than for AlInP. The AlInP was found to spontaneously order even when grown after a completely disordered AlGaInP layer. The Raman results show features correlated to the electron diffraction results and hence we conclude that this technique constitutes a reliable nondestructive means of characterizing this system.

AB - We report a systematic study of the effect of substrate orientation on the ordering in the AlGaInP system, including the Al0.52In0.48P lattice-matched ternary case. Four AlGaInP/GaAs/AlInP samples were grown by metalorganic vapor phase epitaxy under identical growth conditions on [100] substrates orientated 0°, 2°, 10° and 15° either towards the [110] or the [111] axis. The ordering in both the AlInP and the AlGaInP layers was studied by electron diffraction and the Raman scattering technique. The tendency for ordering decreased with increasing misorientation and is less for (AlxGa1-x)0.52In0.48P than for AlInP. The AlInP was found to spontaneously order even when grown after a completely disordered AlGaInP layer. The Raman results show features correlated to the electron diffraction results and hence we conclude that this technique constitutes a reliable nondestructive means of characterizing this system.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system

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