Electron energy loss studies of dislocations in GaN thin films

U. Bangert, A. Gutiérrez-Sosa, A. J. Harvey, C. J. Fall, R. Jones

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of dislocations in epitaxial GaN films on the low loss and the core loss electron energy loss spectrum were studied. The relative dislocation signal strength was considered in both orientations on grounds of geometric considerations, and from comparison with the experimental signal. The low loss results showed that the scattering cross sections for dislocation related scattering in the band gap regime were smaller than for bulk scattering processes.

Original languageEnglish
Pages (from-to)2728-2735
Number of pages8
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - 1 Mar 2003
Externally publishedYes

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