Abstract
The effects of dislocations in epitaxial GaN films on the low loss and the core loss electron energy loss spectrum were studied. The relative dislocation signal strength was considered in both orientations on grounds of geometric considerations, and from comparison with the experimental signal. The low loss results showed that the scattering cross sections for dislocation related scattering in the band gap regime were smaller than for bulk scattering processes.
Original language | English |
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Pages (from-to) | 2728-2735 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Mar 2003 |
Externally published | Yes |