TY - JOUR
T1 - Electronic Structure Modification of Ion Implanted Graphene
T2 - The Spectroscopic Signatures of p- and n-Type Doping
AU - Kepaptsoglou, Demie
AU - Hardcastle, Trevor P.
AU - Seabourne, Che R.
AU - Bangert, Ursel
AU - Zan, Recep
AU - Amani, Julian Alexander
AU - Hofsäss, Hans
AU - Nicholls, Rebecca J.
AU - Brydson, Rik M.D.
AU - Scott, Andrew J.
AU - Ramasse, Quentin M.
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/11/24
Y1 - 2015/11/24
N2 - A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of ∗ bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized ∗ states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized σ∗ antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.
AB - A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of ∗ bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized ∗ states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized σ∗ antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.
KW - ab initio calculations
KW - DFT
KW - doping
KW - EELS
KW - electronic structure
KW - graphene
KW - STEM
UR - http://www.scopus.com/inward/record.url?scp=84948407574&partnerID=8YFLogxK
U2 - 10.1021/acsnano.5b05305
DO - 10.1021/acsnano.5b05305
M3 - Article
AN - SCOPUS:84948407574
SN - 1936-0851
VL - 9
SP - 11398
EP - 11407
JO - ACS Nano
JF - ACS Nano
IS - 11
ER -