Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

Demie Kepaptsoglou, Trevor P. Hardcastle, Che R. Seabourne, Ursel Bangert, Recep Zan, Julian Alexander Amani, Hans Hofsäss, Rebecca J. Nicholls, Rik M.D. Brydson, Andrew J. Scott, Quentin M. Ramasse

Research output: Contribution to journalArticlepeer-review

Abstract

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations is used to describe the electronic structure modifications incurred by free-standing graphene through two types of single-atom doping. The N K and C K electron energy loss transitions show the presence of ∗ bonding states, which are highly localized around the N dopant. In contrast, the B K transition of a single B dopant atom shows an unusual broad asymmetric peak which is the result of delocalized ∗ states away from the B dopant. The asymmetry of the B K toward higher energies is attributed to highly localized σ∗ antibonding states. These experimental observations are then interpreted as direct fingerprints of the expected p- and n-type behavior of graphene doped in this fashion, through careful comparison with density functional theory calculations.

Original languageEnglish
Pages (from-to)11398-11407
Number of pages10
JournalACS Nano
Volume9
Issue number11
DOIs
Publication statusPublished - 24 Nov 2015

Keywords

  • ab initio calculations
  • DFT
  • doping
  • EELS
  • electronic structure
  • graphene
  • STEM

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