Erratum: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol (Journal of Materials Chemistry C (2015) 3 (7455-7462))

M. Bezuidenhout; T. Kennedy; S. Belochapkine; Y. Guo; E. Mullane; P. A. Kiely; K. M. Ryan

doi:10.1039/c5tc90134k

Erratum: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol (Journal of Materials Chemistry C (2015) 3 (7455-7462))

M. Bezuidenhout, T. Kennedy, S. Belochapkine, Y. Guo, E. Mullane, P. A. Kiely, K. M. Ryan

University of Limerick

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	8434
Number of pages	1
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	32
DOIs	https://doi.org/10.1039/c5tc90134k
Publication status	Published - 14 Jul 2015

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10.1039/c5tc90134k

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title = "Erratum: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol (Journal of Materials Chemistry C (2015) 3 (7455-7462))",

author = "M. Bezuidenhout and T. Kennedy and S. Belochapkine and Y. Guo and E. Mullane and Kiely, {P. A.} and Ryan, {K. M.}",

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T2 - High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol (Journal of Materials Chemistry C (2015) 3 (7455-7462))

AU - Bezuidenhout, M.

AU - Kennedy, T.

AU - Belochapkine, S.

AU - Guo, Y.

AU - Mullane, E.

AU - Kiely, P. A.

AU - Ryan, K. M.

PY - 2015/7/14

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DO - 10.1039/c5tc90134k

M3 - Comment/debate

AN - SCOPUS:84938709671

SN - 2050-7534

VL - 3

SP - 8434

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 32

ER -

Erratum: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol (Journal of Materials Chemistry C (2015) 3 (7455-7462))

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