TY - JOUR
T1 - Evolution of Hierarchically Layered Cu-Rich Silicide Nanoarchitectures
AU - Amiinu, Ibrahim Saana
AU - Kapuria, Nilotpal
AU - Adegoke, Temilade Esther
AU - Holzinger, Angelika
AU - Geaney, Hugh
AU - Scanlon, Micheál D.
AU - Ryan, Kevin M.
N1 - Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/10/7
Y1 - 2020/10/7
N2 - A solution-based synthesis of well-ordered Cu-rich silicide nanoarchitectures, consisting of a pair of layered cups and stems (ρ-Cu15Si4), is demonstrated. The as-grown ρ-Cu15Si4 typically exhibits distinct interconnected 1D stems consisting of a stack of nanorods (∼300 nm in length) terminated with concave hexagonal 3D cups that evolve through a self-regulated layer-by-layer growth mechanism. Discrete-time ex situ experimental observations reveal that the ρ-Cu15Si4 evolution is driven by interatomic diffusion, initially triggering the formation of binary-phase silicide islands (spheres) followed by the formation of hexagonal discs, stem growth, and lateral elongation in exactly opposite directions. It is further shown that electrochemically pregrown Cu crystals can facilitate the direct growth of ρ-Cu15Si4 in high yield with an enhanced substrate coverage.
AB - A solution-based synthesis of well-ordered Cu-rich silicide nanoarchitectures, consisting of a pair of layered cups and stems (ρ-Cu15Si4), is demonstrated. The as-grown ρ-Cu15Si4 typically exhibits distinct interconnected 1D stems consisting of a stack of nanorods (∼300 nm in length) terminated with concave hexagonal 3D cups that evolve through a self-regulated layer-by-layer growth mechanism. Discrete-time ex situ experimental observations reveal that the ρ-Cu15Si4 evolution is driven by interatomic diffusion, initially triggering the formation of binary-phase silicide islands (spheres) followed by the formation of hexagonal discs, stem growth, and lateral elongation in exactly opposite directions. It is further shown that electrochemically pregrown Cu crystals can facilitate the direct growth of ρ-Cu15Si4 in high yield with an enhanced substrate coverage.
UR - http://www.scopus.com/inward/record.url?scp=85095115135&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.0c00833
DO - 10.1021/acs.cgd.0c00833
M3 - Article
AN - SCOPUS:85095115135
SN - 1528-7483
VL - 20
SP - 6677
EP - 6682
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 10
ER -