TY - GEN
T1 - Extremely High Dielectric Breakdown Field in Polyimide/Silica Nanocomposites Functionalized with APTES Ligand
AU - Diaham, Sombel
AU - Benfridja, Imadeddine
AU - Kennedy, Tadhg
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - A new state-of-the-art record for dielectric breakdown strength enhancement of polyimide-based (PI) nanocomposites is reported. This achievement has been obtained through a meticulous optimization of the surface chemistry of silica (SiO2) nanoparticles. An efficient surface functionalization using 3aminopropyl triethoxysilane (APTES) enabled the successful grafting of a single-layer ligand coverage onto SiO2 and to reach an optimal colloidal stability, promoting their homogenous dispersion within the PI matrix. PI/SiO2 @APTES nanocomposite films exhibit significant improvements of the dielectric strength. This study demonstrates for the very first time the path to design revolutionary ultra-high breakdown field strength properties in a PI-based nanocomposite with EB D ∼ 1000 V/μ m and an enhancement factor ηE ∼ 68 % compared to pure PI. Our results present a methodology for significantly advancing the state-of-theart, enabling PI-based nanocomposite films to unlock new highvoltage applications, such as integrated insulation and capacitive energy storage.
AB - A new state-of-the-art record for dielectric breakdown strength enhancement of polyimide-based (PI) nanocomposites is reported. This achievement has been obtained through a meticulous optimization of the surface chemistry of silica (SiO2) nanoparticles. An efficient surface functionalization using 3aminopropyl triethoxysilane (APTES) enabled the successful grafting of a single-layer ligand coverage onto SiO2 and to reach an optimal colloidal stability, promoting their homogenous dispersion within the PI matrix. PI/SiO2 @APTES nanocomposite films exhibit significant improvements of the dielectric strength. This study demonstrates for the very first time the path to design revolutionary ultra-high breakdown field strength properties in a PI-based nanocomposite with EB D ∼ 1000 V/μ m and an enhancement factor ηE ∼ 68 % compared to pure PI. Our results present a methodology for significantly advancing the state-of-theart, enabling PI-based nanocomposite films to unlock new highvoltage applications, such as integrated insulation and capacitive energy storage.
UR - https://www.scopus.com/pages/publications/105025008027
U2 - 10.1109/CEIDP61707.2025.11218545
DO - 10.1109/CEIDP61707.2025.11218545
M3 - Conference contribution
AN - SCOPUS:105025008027
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
SP - 861
EP - 864
BT - 2025 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 100th IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2025
Y2 - 14 September 2025 through 17 September 2025
ER -