@inproceedings{c1d1bc8c08214b58898ab4b5bd12e104,
title = "Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs",
abstract = "Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.",
author = "Carvajal, {J. J.} and J. Mena and Bilousov, {O. V.} and O. Mart{\'i}nez and J. Jim{\'e}nez and Zubialevich, {V. Z.} and Parbrook, {P. J.} and H. Geaney and C. O'Dwyer and F. D{\'i}az and M. Aguil{\'o}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06601.0163ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "163--176",
editor = "S. Jang and K. Shenai and Hunter, {G. W.} and F. Ren and C. O'Dwyer and Mishra, {K. C.}",
booktitle = "Wide Bandgap Semiconductor Materials and Devices 16",
edition = "1",
}
