Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs

J. J. Carvajal; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V. Z. Zubialevich; P. J. Parbrook; H. Geaney; C. O'Dwyer; F. Díaz; M. Aguiló

doi:10.1149/06601.0163ecst

Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs

J. J. Carvajal
, J. Mena
, O. V. Bilousov
, O. Martínez
, J. Jiménez
, V. Z. Zubialevich
, P. J. Parbrook
, H. Geaney
, C. O'Dwyer
, F. Díaz
, M. Aguiló

Universidad Rovira i Virgili
University of Valladolid
University College Cork

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 16
Editors	S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, K. C. Mishra
Publisher	Electrochemical Society Inc.
Pages	163-176
Number of pages	14
Edition	1
ISBN (Electronic)	9781607685913
DOIs	https://doi.org/10.1149/06601.0163ecst
Publication status	Published - 2015
Externally published	Yes
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States Duration: 24 May 2015 → 28 May 2015

Publication series

Name	ECS Transactions
Number	1
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	24/05/15 → 28/05/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1149/06601.0163ecst

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Carvajal, J. J., Mena, J., Bilousov, O. V., Martínez, O., Jiménez, J., Zubialevich, V. Z., Parbrook, P. J., Geaney, H., O'Dwyer, C., Díaz, F., & Aguiló, M. (2015). Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs. In S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, & K. C. Mishra (Eds.), Wide Bandgap Semiconductor Materials and Devices 16 (1 ed., pp. 163-176). (ECS Transactions; Vol. 66, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0163ecst

Carvajal, J. J. ; Mena, J. ; Bilousov, O. V. et al. / Fully porous GaN p-n junctions fabricated by chemical vapor deposition : A green technology towards more efficient LEDs. Wide Bandgap Semiconductor Materials and Devices 16. editor / S. Jang ; K. Shenai ; G. W. Hunter ; F. Ren ; C. O'Dwyer ; K. C. Mishra. 1. ed. Electrochemical Society Inc., 2015. pp. 163-176 (ECS Transactions; 1).

@inproceedings{c1d1bc8c08214b58898ab4b5bd12e104,

title = "Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs",

abstract = "Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.",

author = "Carvajal, \{J. J.\} and J. Mena and Bilousov, \{O. V.\} and O. Mart{\'i}nez and J. Jim{\'e}nez and Zubialevich, \{V. Z.\} and Parbrook, \{P. J.\} and H. Geaney and C. O'Dwyer and F. D{\'i}az and M. Aguil{\'o}",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06601.0163ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "163--176",

editor = "S. Jang and K. Shenai and Hunter, \{G. W.\} and F. Ren and C. O'Dwyer and Mishra, \{K. C.\}",

booktitle = "Wide Bandgap Semiconductor Materials and Devices 16",

edition = "1",

}

Carvajal, JJ, Mena, J, Bilousov, OV, Martínez, O, Jiménez, J, Zubialevich, VZ, Parbrook, PJ, Geaney, H, O'Dwyer, C, Díaz, F & Aguiló, M 2015, Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs. in S Jang, K Shenai, GW Hunter, F Ren, C O'Dwyer & KC Mishra (eds), Wide Bandgap Semiconductor Materials and Devices 16. 1 edn, ECS Transactions, no. 1, vol. 66, Electrochemical Society Inc., pp. 163-176, Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting, Chicago, United States, 24/05/15. https://doi.org/10.1149/06601.0163ecst

Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs. / Carvajal, J. J.; Mena, J.; Bilousov, O. V. et al.
Wide Bandgap Semiconductor Materials and Devices 16. ed. / S. Jang; K. Shenai; G. W. Hunter; F. Ren; C. O'Dwyer; K. C. Mishra. 1. ed. Electrochemical Society Inc., 2015. p. 163-176 (ECS Transactions; Vol. 66, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Fully porous GaN p-n junctions fabricated by chemical vapor deposition

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting

AU - Carvajal, J. J.

AU - Mena, J.

AU - Bilousov, O. V.

AU - Martínez, O.

AU - Jiménez, J.

AU - Zubialevich, V. Z.

AU - Parbrook, P. J.

AU - Geaney, H.

AU - O'Dwyer, C.

AU - Díaz, F.

AU - Aguiló, M.

PY - 2015

Y1 - 2015

N2 - Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

AB - Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

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A2 - Jang, S.

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PB - Electrochemical Society Inc.

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ER -

Carvajal JJ, Mena J, Bilousov OV, Martínez O, Jiménez J, Zubialevich VZ et al. Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs. In Jang S, Shenai K, Hunter GW, Ren F, O'Dwyer C, Mishra KC, editors, Wide Bandgap Semiconductor Materials and Devices 16. 1 ed. Electrochemical Society Inc. 2015. p. 163-176. (ECS Transactions; 1). doi: 10.1149/06601.0163ecst

Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs

Abstract

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