Abstract
Semi-insulating InP layers have been deposited using multi-frit trichloride vapor phase epitaxy (MTVPE) for the first time. Iron doping was achieved using FeCI2 generated in situ by passing PCI3 over pure iron foil (99.9999%) in the source zone. The background carrier concentration for undoped InP was 1 x 1014 cm-3. The resistivity of the semi-insulating InP epitaxial layers was evaluated by current-voltage measurements. Values as high as 1 x 109 Ω-cm were measured, and current blocking was effectively maintained up to a bias of 20 V with a 3 μm thick semi-insulating InP layer. An activation energy of 0.59 eV was estimated from the temperature dependence of the resistivity. Such layers have potential device applications for electrical isolation and particularly for ion-implanted devices. Ion implantations were performed on the present layers and the results are compared with those obtained for MOCVD-grown semi-insulating InP material and for semi-insulating InP substrates.
Original language | English |
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Pages (from-to) | L41-L43 |
Journal | Journal of the Electrochemical Society |
Volume | 138 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sep 1991 |
Externally published | Yes |