Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

Hugh Geaney; Calum Dickinson; Colm O'Dwyer; Emma Mullane; Ajay Singh; Kevin M. Ryan

doi:10.1021/cm302066n

Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

Hugh Geaney, Calum Dickinson, Colm O'Dwyer, Emma Mullane, Ajay Singh, Kevin M. Ryan

Department of Chemical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

Here, we report the formation of high density arrays of Cu ₁₅Si₄ nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu ₁₅Si₄ crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.

Original language	English
Pages (from-to)	4319-4325
Number of pages	7
Journal	Chemistry of Materials
Volume	24
Issue number	22
DOIs	https://doi.org/10.1021/cm302066n
Publication status	Published - 27 Nov 2012

Keywords

copper
high boiling point solvent synthesis
silicide nanowires

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10.1021/cm302066n

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title = "Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system",

abstract = "Here, we report the formation of high density arrays of Cu 15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu 15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.",

keywords = "copper, high boiling point solvent synthesis, silicide nanowires",

author = "Hugh Geaney and Calum Dickinson and Colm O'Dwyer and Emma Mullane and Ajay Singh and Ryan, {Kevin M.}",

year = "2012",

month = nov,

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AU - Geaney, Hugh

AU - Dickinson, Calum

AU - O'Dwyer, Colm

AU - Mullane, Emma

AU - Singh, Ajay

AU - Ryan, Kevin M.

PY - 2012/11/27

Y1 - 2012/11/27

N2 - Here, we report the formation of high density arrays of Cu 15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu 15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.

AB - Here, we report the formation of high density arrays of Cu 15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu 15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.

KW - copper

KW - high boiling point solvent synthesis

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JO - Chemistry of Materials

JF - Chemistry of Materials

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ER -

Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system

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