Growth of InGaAs in a hot-walled vapor phase epitaxy reactor using a trimethylarsenic source

Trimethylarsenic was used as a group V source in a hot-walled vapor phase epitaxy (VPE) reactor. High quality InGaAs was grown. Samples with no intentional doping were n type with a background carrier concentration of 6×10¹⁵ cm^-3, about three times higher than that of comparison samples grown using arsine. Mobilities measured at 77 and 300 K, respectively, were similar to those measured for corresponding samples grown using arsine, suggesting that, in contrast with metalorganic chemical vapor deposition using trimethylarsenic, no significant carbon incorporation occurred. It is concluded that the prognosis is good for the replacement of arsine in hot-walled VPE reactors by an arsenic alkyl such as trimethylarsenic.