Growth of InGaAs structures using in situ electrochemically generated arsine

D. N. Buckley; C. W. Seabury; J. L. Valdes; G. Cadet; J. W. Mitchell; M. A. DiGiuseppe; R. C. Smith; J. R.C. Filipe; R. B. Bylsma; U. K. Chakrabarti; K. W. Wang

doi:10.1063/1.104136

Growth of InGaAs structures using in situ electrochemically generated arsine

D. N. Buckley, C. W. Seabury, J. L. Valdes, G. Cadet, J. W. Mitchell, M. A. DiGiuseppe, R. C. Smith, J. R.C. Filipe, R. B. Bylsma, U. K. Chakrabarti, K. W. Wang

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Abstract

The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.

Original language	English
Pages (from-to)	1684-1686
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	16
DOIs	https://doi.org/10.1063/1.104136
Publication status	Published - 1990
Externally published	Yes

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@article{9c46e729a79f443caac707ae88316ab2,

title = "Growth of InGaAs structures using in situ electrochemically generated arsine",

abstract = "The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.",

author = "Buckley, {D. N.} and Seabury, {C. W.} and Valdes, {J. L.} and G. Cadet and Mitchell, {J. W.} and DiGiuseppe, {M. A.} and Smith, {R. C.} and Filipe, {J. R.C.} and Bylsma, {R. B.} and Chakrabarti, {U. K.} and Wang, {K. W.}",

year = "1990",

doi = "10.1063/1.104136",

language = "English",

volume = "57",

pages = "1684--1686",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "16",

}

TY - JOUR

T1 - Growth of InGaAs structures using in situ electrochemically generated arsine

AU - Buckley, D. N.

AU - Seabury, C. W.

AU - Valdes, J. L.

AU - Cadet, G.

AU - Mitchell, J. W.

AU - DiGiuseppe, M. A.

AU - Smith, R. C.

AU - Filipe, J. R.C.

AU - Bylsma, R. B.

AU - Chakrabarti, U. K.

AU - Wang, K. W.

PY - 1990

Y1 - 1990

N2 - The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.

AB - The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.

UR - http://www.scopus.com/inward/record.url?scp=36549095633&partnerID=8YFLogxK

U2 - 10.1063/1.104136

DO - 10.1063/1.104136

M3 - Article

AN - SCOPUS:36549095633

SN - 0003-6951

VL - 57

SP - 1684

EP - 1686

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Growth of InGaAs structures using in situ electrochemically generated arsine

Abstract

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