High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol

M. Bezuidenhout, T. Kennedy, S. Belochapkine, Y. Guo, E. Mullane, P. A. Kiely, K. M. Ryan

Research output: Contribution to journalArticlepeer-review

Abstract

We report the formation of silicon, germanium and alloyed Si1-xGex nanowires by direct pyrolysis of liquid precursors on a heated substrate in an inert environment. The nanowires form in high density on the substrate with a fast reaction time. We use SEM, HRTEM, EDX-STEM, and Raman spectroscopy to carry out an in depth study into the population distribution of Si1-xGex nanowires. The method was sufficiently adaptable to pattern the nanowire growth using standard dry film lithography techniques. Additionally, we further show that direct writing with a copper metal pen deposited sufficient catalyst to allow localised nanowire growth constrained to the treated areas.

Original languageEnglish
Pages (from-to)7455-7462
Number of pages8
JournalJournal of Materials Chemistry C
Volume3
Issue number28
DOIs
Publication statusPublished - 28 Jul 2015

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