Abstract
We report the formation of silicon, germanium and alloyed Si1-xGex nanowires by direct pyrolysis of liquid precursors on a heated substrate in an inert environment. The nanowires form in high density on the substrate with a fast reaction time. We use SEM, HRTEM, EDX-STEM, and Raman spectroscopy to carry out an in depth study into the population distribution of Si1-xGex nanowires. The method was sufficiently adaptable to pattern the nanowire growth using standard dry film lithography techniques. Additionally, we further show that direct writing with a copper metal pen deposited sufficient catalyst to allow localised nanowire growth constrained to the treated areas.
Original language | English |
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Pages (from-to) | 7455-7462 |
Number of pages | 8 |
Journal | Journal of Materials Chemistry C |
Volume | 3 |
Issue number | 28 |
DOIs | |
Publication status | Published - 28 Jul 2015 |