High resolution analysis of embedded quantum dots

A. J. Harvey, H. J. Davock, P. J. Goodhew

Research output: Contribution to journalConference articlepeer-review

Abstract

A key piece of information in the understanding of quantum dot behaviour is the composition of the dot after any capping and/or annealing processes. It is important to know the composition and uniformity of the dots after they have been embedded in a semiconducting matrix, which usually contains one or more of the elements in the dot. This is a classically difficult analytical problem for any TEM technique. This problem has been approached by developing a model of the interaction between the electron probe and any dot/wetting-layer/matrix configuration. This model predicts the shape of an analytical line scan for any particular configuration and includes the effect of beam broadening on the analysis of dots at different depths within the thin section. The results are compared with STEM analyses of InAs dots in a GaAs matrix.

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume583
Publication statusPublished - 2000
Externally publishedYes
EventSelf-Organized Processes in Semiconductor Alloys - Boston, MA, USA
Duration: 29 Nov 19992 Dec 1999

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