High resolution analysis of embedded quantum dots

A. J. Harvey, H. J. Davock, D. Zhi, J. G. Zheng, P. J. Goodhew

Research output: Contribution to journalConference articlepeer-review

Abstract

It is important to know the composition and uniformity of quantum dots after they have been embedded in a semiconducting matrix, which usually contains one or more of the elements in the dot. This is a classically difficult analytical problem for any TEM technique. Recent published models predict the shape of an analytical X-ray line scan produced by the interaction between the electron probe and any dot/wetting-layer/matrix combination. Previously this approach has only been applied to a cross-sectional configuration, but the model has now been extended to include plan view samples. By considering both perspectives, a clearer understanding of the size and composition of buried dots can be achieved. Different compositional variations within the dots have also been included in the model and are compared to experimental data in STEM analyses of InAs dots in a GaAs matrix.

Original languageEnglish
Pages (from-to)J8.8.1-J8.8.5
JournalMaterials Research Society Symposium - Proceedings
Volume642
Publication statusPublished - 2001
Externally publishedYes
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: 27 Nov 200030 Nov 2000

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