Highly-ordered growth of solution-processable zno for thin film transistors

Darragh Buckley, David McNulty, Vitaly Zubialevich, Peter Parbrook, Colm O'Dwyer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate that crystalline, epitaxial-like and highly ordered ZnO thin films and quasi-superlattice structures can be achieved from a precursor liquid at relatively low temperature via spin-coating. The synthesised films are smooth, stoichiometric ZnO with controllable thickness. An iterative layer-by-layer coating schematic is employed to demonstrate the effects of film thickness on structure, morphology as well as the surface and internal defects. Characterisation of the crystallinity, morphology, O-vacancy formation, stoichiometry. surface roughness and thickness variation was determined through X-ray diffraction, scanning and transmission electron and atomic force microscopy, X-ray photoelectron and photoluminescence spectroscopy. We demonstrate that iterative spin-coating of deposited ZnO films results in a transition in crystal texture with increasing thickness (number of layers) from the [1010] m-plane to the [0002] c-plane. The films attain a c-axis preferential orientation, with no other crystalline peaks present. Results show that the film's surface morphology was very smooth, with average rms roughness <0.15 nm. Examination of these films also shows the consistency of the surface composition and defect level while highlighting the effect of temperature and cumulative annealing condition on the internal defect concentration.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 7
EditorsC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. Hillier, R. P. Lynch, P. Vereecken, H. Wang, M. Sunkara
PublisherElectrochemical Society Inc.
Pages99-107
Number of pages9
Edition4
ISBN (Electronic)9781607688075
DOIs
Publication statusPublished - 2017
Externally publishedYes
EventProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: 28 May 20171 Jun 2017

Publication series

NameECS Transactions
Number4
Volume77
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceProcesses at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017
Country/TerritoryUnited States
CityNew Orleans
Period28/05/171/06/17

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