TY - GEN
T1 - Highly-ordered growth of solution-processable zno for thin film transistors
AU - Buckley, Darragh
AU - McNulty, David
AU - Zubialevich, Vitaly
AU - Parbrook, Peter
AU - O'Dwyer, Colm
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2017
Y1 - 2017
N2 - We demonstrate that crystalline, epitaxial-like and highly ordered ZnO thin films and quasi-superlattice structures can be achieved from a precursor liquid at relatively low temperature via spin-coating. The synthesised films are smooth, stoichiometric ZnO with controllable thickness. An iterative layer-by-layer coating schematic is employed to demonstrate the effects of film thickness on structure, morphology as well as the surface and internal defects. Characterisation of the crystallinity, morphology, O-vacancy formation, stoichiometry. surface roughness and thickness variation was determined through X-ray diffraction, scanning and transmission electron and atomic force microscopy, X-ray photoelectron and photoluminescence spectroscopy. We demonstrate that iterative spin-coating of deposited ZnO films results in a transition in crystal texture with increasing thickness (number of layers) from the [1010] m-plane to the [0002] c-plane. The films attain a c-axis preferential orientation, with no other crystalline peaks present. Results show that the film's surface morphology was very smooth, with average rms roughness <0.15 nm. Examination of these films also shows the consistency of the surface composition and defect level while highlighting the effect of temperature and cumulative annealing condition on the internal defect concentration.
AB - We demonstrate that crystalline, epitaxial-like and highly ordered ZnO thin films and quasi-superlattice structures can be achieved from a precursor liquid at relatively low temperature via spin-coating. The synthesised films are smooth, stoichiometric ZnO with controllable thickness. An iterative layer-by-layer coating schematic is employed to demonstrate the effects of film thickness on structure, morphology as well as the surface and internal defects. Characterisation of the crystallinity, morphology, O-vacancy formation, stoichiometry. surface roughness and thickness variation was determined through X-ray diffraction, scanning and transmission electron and atomic force microscopy, X-ray photoelectron and photoluminescence spectroscopy. We demonstrate that iterative spin-coating of deposited ZnO films results in a transition in crystal texture with increasing thickness (number of layers) from the [1010] m-plane to the [0002] c-plane. The films attain a c-axis preferential orientation, with no other crystalline peaks present. Results show that the film's surface morphology was very smooth, with average rms roughness <0.15 nm. Examination of these films also shows the consistency of the surface composition and defect level while highlighting the effect of temperature and cumulative annealing condition on the internal defect concentration.
UR - http://www.scopus.com/inward/record.url?scp=85021809549&partnerID=8YFLogxK
U2 - 10.1149/07704.0099ecst
DO - 10.1149/07704.0099ecst
M3 - Conference contribution
AN - SCOPUS:85021809549
T3 - ECS Transactions
SP - 99
EP - 107
BT - Processes at the Semiconductor Solution Interface 7
A2 - O'Dwyer, C.
A2 - Buckley, D. N.
A2 - Etcheberry, A.
A2 - Hillier, A.
A2 - Lynch, R. P.
A2 - Vereecken, P.
A2 - Wang, H.
A2 - Sunkara, M.
PB - Electrochemical Society Inc.
T2 - Processes at the Semiconductor Solution Interface 7, PSSI 2017 - 231st ECS Meeting 2017
Y2 - 28 May 2017 through 1 June 2017
ER -