Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope

U. Bangert; A. J. Harvey; C. Dieker; A. Hartmann; R. Keyse

doi:10.1080/01418619608240733

Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope

U. Bangert
, A. J. Harvey
, C. Dieker
, A. Hartmann
, R. Keyse

Research output: Contribution to journal › Article › peer-review

Abstract

X-ray analysis in a high-resolution scanning transmission electron microscope is carried out on III—V compound and Si_xGe_1-xquantum wells and quantum wires. Simulated X-ray profiles were obtained by convolving the electron beam profile with a composition function. From best fits with experimental data, quantitated composition profiles can be obtained with nanometre resolution. Compositions in wells and wires are inhomogeneous. Alloy clusters tend to form in III-V compound quaternary quantum well stacks. Si_xGe_1-xquantum wells on patterned substrates show strong compositional asymmetries along the growth direction and so do quantum wires in both materials systems. In the case of the Si_xGe_1-xsystem, aspects of the growth dynamics which lead to the observed compositional behaviour are deduced.

Original language	English
Pages (from-to)	1421-1437
Number of pages	17
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	74
Issue number	6
DOIs	https://doi.org/10.1080/01418619608240733
Publication status	Published - Dec 1996
Externally published	Yes

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10.1080/01418619608240733

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@article{6e5ae216fd1e4067882116d29415223e,

title = "Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope",

abstract = "X-ray analysis in a high-resolution scanning transmission electron microscope is carried out on III—V compound and SixGe1-xquantum wells and quantum wires. Simulated X-ray profiles were obtained by convolving the electron beam profile with a composition function. From best fits with experimental data, quantitated composition profiles can be obtained with nanometre resolution. Compositions in wells and wires are inhomogeneous. Alloy clusters tend to form in III-V compound quaternary quantum well stacks. SixGe1-xquantum wells on patterned substrates show strong compositional asymmetries along the growth direction and so do quantum wires in both materials systems. In the case of the SixGe1-xsystem, aspects of the growth dynamics which lead to the observed compositional behaviour are deduced.",

author = "U. Bangert and Harvey, \{A. J.\} and C. Dieker and A. Hartmann and R. Keyse",

year = "1996",

month = dec,

doi = "10.1080/01418619608240733",

language = "English",

volume = "74",

pages = "1421--1437",

journal = "Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties",

issn = "0141-8610",

number = "6",

}

Bangert, U , Harvey, AJ, Dieker, C, Hartmann, A & Keyse, R 1996, 'Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope', Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, vol. 74, no. 6, pp. 1421-1437. https://doi.org/10.1080/01418619608240733

Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope. / Bangert, U.; Harvey, A. J.; Dieker, C. et al.
In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Vol. 74, No. 6, 12.1996, p. 1421-1437.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope

AU - Bangert, U.

AU - Harvey, A. J.

AU - Dieker, C.

AU - Hartmann, A.

AU - Keyse, R.

PY - 1996/12

Y1 - 1996/12

N2 - X-ray analysis in a high-resolution scanning transmission electron microscope is carried out on III—V compound and SixGe1-xquantum wells and quantum wires. Simulated X-ray profiles were obtained by convolving the electron beam profile with a composition function. From best fits with experimental data, quantitated composition profiles can be obtained with nanometre resolution. Compositions in wells and wires are inhomogeneous. Alloy clusters tend to form in III-V compound quaternary quantum well stacks. SixGe1-xquantum wells on patterned substrates show strong compositional asymmetries along the growth direction and so do quantum wires in both materials systems. In the case of the SixGe1-xsystem, aspects of the growth dynamics which lead to the observed compositional behaviour are deduced.

AB - X-ray analysis in a high-resolution scanning transmission electron microscope is carried out on III—V compound and SixGe1-xquantum wells and quantum wires. Simulated X-ray profiles were obtained by convolving the electron beam profile with a composition function. From best fits with experimental data, quantitated composition profiles can be obtained with nanometre resolution. Compositions in wells and wires are inhomogeneous. Alloy clusters tend to form in III-V compound quaternary quantum well stacks. SixGe1-xquantum wells on patterned substrates show strong compositional asymmetries along the growth direction and so do quantum wires in both materials systems. In the case of the SixGe1-xsystem, aspects of the growth dynamics which lead to the observed compositional behaviour are deduced.

UR - https://www.scopus.com/pages/publications/0030480901

U2 - 10.1080/01418619608240733

DO - 10.1080/01418619608240733

M3 - Article

AN - SCOPUS:0030480901

SN - 0141-8610

VL - 74

SP - 1421

EP - 1437

JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

IS - 6

ER -

Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope

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