Imaging of Bernal stacked and misoriented graphene and boron nitride: Experiment and simulation

R. Zan; U. Bangert; Q. Ramasse; K. S. Novoselov

doi:10.1111/j.1365-2818.2011.03520.x

Imaging of Bernal stacked and misoriented graphene and boron nitride: Experiment and simulation

R. Zan, U. Bangert, Q. Ramasse, K. S. Novoselov

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Abstract

Experimental atomic resolution bright and high angle dark field transmission electron microscopy images of mono- and few-layer graphene and boron nitride, as well as of turbostratic arrangements in both materials, are compared to their simulated counterparts. Changes in the images according to defocus, layer number and accelerating voltage are discussed. It emerges that simulations with realistic microscope parameters accurately depict experimental graphene and boron nitride images and present a reliable tool for their interpretation.

Original language	English
Pages (from-to)	152-158
Number of pages	7
Journal	Journal of Microscopy
Volume	244
Issue number	2
DOIs	https://doi.org/10.1111/j.1365-2818.2011.03520.x
Publication status	Published - Nov 2011

Keywords

BN
Graphene
Simulation
STEM
TEM

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10.1111/j.1365-2818.2011.03520.x

Cite this

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abstract = "Experimental atomic resolution bright and high angle dark field transmission electron microscopy images of mono- and few-layer graphene and boron nitride, as well as of turbostratic arrangements in both materials, are compared to their simulated counterparts. Changes in the images according to defocus, layer number and accelerating voltage are discussed. It emerges that simulations with realistic microscope parameters accurately depict experimental graphene and boron nitride images and present a reliable tool for their interpretation.",

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AB - Experimental atomic resolution bright and high angle dark field transmission electron microscopy images of mono- and few-layer graphene and boron nitride, as well as of turbostratic arrangements in both materials, are compared to their simulated counterparts. Changes in the images according to defocus, layer number and accelerating voltage are discussed. It emerges that simulations with realistic microscope parameters accurately depict experimental graphene and boron nitride images and present a reliable tool for their interpretation.

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KW - Graphene

KW - Simulation

KW - STEM

KW - TEM

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Imaging of Bernal stacked and misoriented graphene and boron nitride: Experiment and simulation

Abstract

Keywords

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