Abstract
The characteristics of GaN photoluminescence have been measured in situ as a function of potential at gold and electrolyte contacts. In the case of the GaN/electrolyte contact, it was found that for aqueous KOH and sulfate-based electrolytes over a pH range of 0-14, the photoluminescence intensity increased sharply at applied potentials close to the flatband value. In contrast, no significant increase in photoluminescence intensity above the open-circuit value was measured for the GaN/Au contact. In this case, the photoluminescence intensity was reduced under reverse biased conditions and the photoluminescence was effectively quenched at reverse potentials above 7.5 V.
Original language | English |
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Pages (from-to) | 3191-3193 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 81 |
Issue number | 17 |
DOIs | |
Publication status | Published - 21 Oct 2002 |