@inproceedings{81aa5145a97c4259b11662f87e161803,
title = "In-situ observation of pore formation and photoelectrochemical etching in n-InP",
abstract = "Electrochemical etching of semiconductors under anodic potentials can lead to the growth of pores under conditions both of darkness and of illumination. In previous work our group has developed a new technique which uses contrast enhanced microscopy to image full electrode surfaces simultaneously with electrochemical control of the potential at the electrode-electrolyte interface. In this paper, we present results obtained using the technique to monitor in situ the InP-electrolyte interface during linear potential sweeps (LPSs) and also to investigate selective photo-electrochemical etching.",
author = "R. Lynch and M. Dornhege and Bodega, {P. Sanchez} and Rotermund, {H. H.} and Buckley, {D. N.}",
year = "2007",
doi = "10.1149/1.2731201",
language = "English",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "331--343",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}