In-situ observation of pore formation and photoelectrochemical etching in n-InP

R. Lynch, M. Dornhege, P. Sanchez Bodega, H. H. Rotermund, D. N. Buckley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrochemical etching of semiconductors under anodic potentials can lead to the growth of pores under conditions both of darkness and of illumination. In previous work our group has developed a new technique which uses contrast enhanced microscopy to image full electrode surfaces simultaneously with electrochemical control of the potential at the electrode-electrolyte interface. In this paper, we present results obtained using the technique to monitor in situ the InP-electrolyte interface during linear potential sweeps (LPSs) and also to investigate selective photo-electrochemical etching.

Original languageEnglish
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
PublisherElectrochemical Society Inc.
Pages331-343
Number of pages13
Edition2
ISBN (Electronic)9781566775519
ISBN (Print)9781566775519
DOIs
Publication statusPublished - 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200710 May 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/TerritoryUnited States
CityChicago, IL
Period6/05/0710/05/07

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