Indentation of GaAlAs and GaInAs at room temperature

R. Haswell; P. Charsley; U. Bangert

Indentation of GaAlAs and GaInAs at room temperature

R. Haswell, P. Charsley, U. Bangert

University of Surrey

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The occurrence of microtwinning in the 〈110〉 rosette arms is compared, after indentation of the (001) surface, for Ga_0.47In_0.53As and Ga_0.7Al_0.3As. The effect of doping in the GaAlAs alloy has been studied and the orientation of the {111} twinning planes determined. It is concluded that p-doping and/or the substitution of In for Al changes the twin plane orientations compared with n-doped GaAlAs.

Original language	English
Title of host publication	Institute of Physics Conference Series
Publisher	Publ by Inst of Physics Publ Ltd
Pages	135-138
Number of pages	4
Edition	117
ISBN (Print)	0854984062
Publication status	Published - 1991
Externally published	Yes
Event	Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl Duration: 25 Mar 1991 → 28 Mar 1991

Publication series

Name	Institute of Physics Conference Series
Number	117
ISSN (Print)	0373-0751

Conference

Conference	Proceedings of the Conference on Microscopy of Semiconducting Materials 1991
City	Oxford, Engl
Period	25/03/91 → 28/03/91

Cite this

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title = "Indentation of GaAlAs and GaInAs at room temperature",

abstract = "The occurrence of microtwinning in the 〈110〉 rosette arms is compared, after indentation of the (001) surface, for Ga0.47In0.53As and Ga0.7Al0.3As. The effect of doping in the GaAlAs alloy has been studied and the orientation of the {111} twinning planes determined. It is concluded that p-doping and/or the substitution of In for Al changes the twin plane orientations compared with n-doped GaAlAs.",

author = "R. Haswell and P. Charsley and U. Bangert",

year = "1991",

language = "English",

isbn = "0854984062",

series = "Institute of Physics Conference Series",

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note = "Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 ; Conference date: 25-03-1991 Through 28-03-1991",

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T1 - Indentation of GaAlAs and GaInAs at room temperature

AU - Haswell, R.

AU - Charsley, P.

AU - Bangert, U.

PY - 1991

Y1 - 1991

N2 - The occurrence of microtwinning in the 〈110〉 rosette arms is compared, after indentation of the (001) surface, for Ga0.47In0.53As and Ga0.7Al0.3As. The effect of doping in the GaAlAs alloy has been studied and the orientation of the {111} twinning planes determined. It is concluded that p-doping and/or the substitution of In for Al changes the twin plane orientations compared with n-doped GaAlAs.

AB - The occurrence of microtwinning in the 〈110〉 rosette arms is compared, after indentation of the (001) surface, for Ga0.47In0.53As and Ga0.7Al0.3As. The effect of doping in the GaAlAs alloy has been studied and the orientation of the {111} twinning planes determined. It is concluded that p-doping and/or the substitution of In for Al changes the twin plane orientations compared with n-doped GaAlAs.

UR - http://www.scopus.com/inward/record.url?scp=0026360419&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026360419

SN - 0854984062

T3 - Institute of Physics Conference Series

SP - 135

EP - 138

BT - Institute of Physics Conference Series

PB - Publ by Inst of Physics Publ Ltd

T2 - Proceedings of the Conference on Microscopy of Semiconducting Materials 1991

Y2 - 25 March 1991 through 28 March 1991

ER -

Indentation of GaAlAs and GaInAs at room temperature

Abstract

Publication series

Conference

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