Indium segregation in InGaN quantum-well structures

N. Duxbury; U. Bangert; P. Dawson; E. J. Thrush; W. Van Der Stricht; K. Jacobs; I. Moerman

doi:10.1063/1.126108

Indium segregation in InGaN quantum-well structures

N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van Der Stricht, K. Jacobs, I. Moerman

Research output: Contribution to journal › Article › peer-review

Abstract

Direct evidence for In-segregation in InGaN/GaN quantum-well structures is given via highly spatially resolved energy dispersive x-ray analysis performed in a dedicated scanning transmission electron microscope. The In fluctuations become increasingly pronounced in the vicinity of dislocations. The latter assist In diffusion and cause severe Ga/In intermixing.

Original language	English
Pages (from-to)	1600-1602
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	12
DOIs	https://doi.org/10.1063/1.126108
Publication status	Published - 20 Mar 2000
Externally published	Yes

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@article{f2801c1466744a15952530b9222063b8,

title = "Indium segregation in InGaN quantum-well structures",

abstract = "Direct evidence for In-segregation in InGaN/GaN quantum-well structures is given via highly spatially resolved energy dispersive x-ray analysis performed in a dedicated scanning transmission electron microscope. The In fluctuations become increasingly pronounced in the vicinity of dislocations. The latter assist In diffusion and cause severe Ga/In intermixing.",

author = "N. Duxbury and U. Bangert and P. Dawson and Thrush, \{E. J.\} and \{Van Der Stricht\}, W. and K. Jacobs and I. Moerman",

year = "2000",

month = mar,

day = "20",

doi = "10.1063/1.126108",

language = "English",

volume = "76",

pages = "1600--1602",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Indium segregation in InGaN quantum-well structures

AU - Duxbury, N.

AU - Bangert, U.

AU - Dawson, P.

AU - Thrush, E. J.

AU - Van Der Stricht, W.

AU - Jacobs, K.

AU - Moerman, I.

PY - 2000/3/20

Y1 - 2000/3/20

N2 - Direct evidence for In-segregation in InGaN/GaN quantum-well structures is given via highly spatially resolved energy dispersive x-ray analysis performed in a dedicated scanning transmission electron microscope. The In fluctuations become increasingly pronounced in the vicinity of dislocations. The latter assist In diffusion and cause severe Ga/In intermixing.

AB - Direct evidence for In-segregation in InGaN/GaN quantum-well structures is given via highly spatially resolved energy dispersive x-ray analysis performed in a dedicated scanning transmission electron microscope. The In fluctuations become increasingly pronounced in the vicinity of dislocations. The latter assist In diffusion and cause severe Ga/In intermixing.

UR - https://www.scopus.com/pages/publications/0000891001

U2 - 10.1063/1.126108

DO - 10.1063/1.126108

M3 - Article

AN - SCOPUS:0000891001

SN - 0003-6951

VL - 76

SP - 1600

EP - 1602

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Indium segregation in InGaN quantum-well structures

Abstract

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