Interfaces analysis of the HfO2/SiO2/Si structure

T. P. Smirnova; L. V. Yakovkina; S. A. Beloshapkin; V. V. Kaichev; N. I. Alferova; Song Jeong-Hwan

doi:10.1016/j.jpcs.2010.02.010

Interfaces analysis of the HfO₂/SiO₂/Si structure

T. P. Smirnova, L. V. Yakovkina, S. A. Beloshapkin, V. V. Kaichev, N. I. Alferova, Song Jeong-Hwan

Research output: Contribution to journal › Article › peer-review

Abstract

The physical and chemical properties of the HfO₂/SiO₂/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO₂ films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium-Hf(dpm)₄ and dicyclopentadienil-hafnium-bis-diethylamide-S{cyrillic}p₂Hf(N(C₂H₅)₂)₂. The amorphous interface layer (IL) between HfO₂ and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO₂ synthesis, and at the annealing of the HfO₂/SiO₂/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO₂/SiO₂ interface, and its chemical structure depends on the thickness of the SiO₂ underlayer.

Original language	English
Pages (from-to)	836-840
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	71
Issue number	5
DOIs	https://doi.org/10.1016/j.jpcs.2010.02.010
Publication status	Published - May 2010

Keywords

A. Thin films

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10.1016/j.jpcs.2010.02.010

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title = "Interfaces analysis of the HfO2/SiO2/Si structure",

abstract = "The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO2 films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium-Hf(dpm)4 and dicyclopentadienil-hafnium-bis-diethylamide-S{cyrillic}p2Hf(N(C2H5)2)2. The amorphous interface layer (IL) between HfO2 and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO2 synthesis, and at the annealing of the HfO2/SiO2/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO2/SiO2 interface, and its chemical structure depends on the thickness of the SiO2 underlayer.",

keywords = "A. Thin films",

author = "Smirnova, {T. P.} and Yakovkina, {L. V.} and Beloshapkin, {S. A.} and Kaichev, {V. V.} and Alferova, {N. I.} and Song Jeong-Hwan",

year = "2010",

month = may,

doi = "10.1016/j.jpcs.2010.02.010",

language = "English",

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T1 - Interfaces analysis of the HfO2/SiO2/Si structure

AU - Smirnova, T. P.

AU - Yakovkina, L. V.

AU - Beloshapkin, S. A.

AU - Kaichev, V. V.

AU - Alferova, N. I.

AU - Jeong-Hwan, Song

PY - 2010/5

Y1 - 2010/5

N2 - The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO2 films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium-Hf(dpm)4 and dicyclopentadienil-hafnium-bis-diethylamide-S{cyrillic}p2Hf(N(C2H5)2)2. The amorphous interface layer (IL) between HfO2 and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO2 synthesis, and at the annealing of the HfO2/SiO2/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO2/SiO2 interface, and its chemical structure depends on the thickness of the SiO2 underlayer.

AB - The physical and chemical properties of the HfO2/SiO2/Si stack have been analyzed using cross-section HR TEM, XPS, IR-spectroscopy and ellipsometry. HfO2 films were deposited by the MO CVD method using as precursors the tetrakis 2,2,6,6 tetramethyl-3,5 heptanedionate hafnium-Hf(dpm)4 and dicyclopentadienil-hafnium-bis-diethylamide-S{cyrillic}p2Hf(N(C2H5)2)2. The amorphous interface layer (IL) between HfO2 and silicon native oxide has been observed by the HRTEM method. The interface layer comprises hafnium silicate with a smooth varying of chemical composition through the IL thickness. The interface layer formation occurs both during HfO2 synthesis, and at the annealing of the HfO2/SiO2/Si stack. It was concluded from the XPS, and the IR-spectroscopy that the hafnium silicate formation occurs via a solid-state reaction at the HfO2/SiO2 interface, and its chemical structure depends on the thickness of the SiO2 underlayer.

KW - A. Thin films

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DO - 10.1016/j.jpcs.2010.02.010

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JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 5

ER -

Interfaces analysis of the HfO₂/SiO₂/Si structure

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