Low-energy (2-5 keV) argon damage in silicon

U. Bangert, P. J. Goodhew, C. Jeynes, I. H. Wilson

Research output: Contribution to journalArticlepeer-review

Abstract

The damage caused by low-energy argon bombardment of silicon has been investigated by Rutherford back-scattering and transmission electron microscopy. At the doses required for sputter cleaning, gas bubbles are formed even at argon energies as low as 2 keV. The bubbles, and the argon they contain, cannot be annealed out below 1100 degrees C, although a significant amount of gas is trapped more weakly in other sites and is released at lower temperatures. The stability of the bubbles is explained in terms of the knock-in of oxygen from the native oxide during bombardment. The formation of bubbles cannot be avoided unless the angle of incidence of the argon is almost glancing.

Original languageEnglish
Article number013
Pages (from-to)589-603
Number of pages15
JournalJournal of Physics D: Applied Physics
Volume19
Issue number4
DOIs
Publication statusPublished - 1986
Externally publishedYes

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