Low-energy Se ion implantation in MoS2 monolayers

Minh N. Bui; Stefan Rost; Manuel Auge; Jhih Sian Tu; Lanqing Zhou; Irene Aguilera; Stefan Blügel; Mahdi Ghorbani-Asl; Arkady V. Krasheninnikov; Arsalan Hashemi; Hannu Pekka Komsa; Lei Jin; Lidia Kibkalo; Eoghan N. O’Connell; Quentin M. Ramasse; Ursel Bangert; Hans C. Hofsäss; Detlev Grützmacher; Beata E. Kardynal

doi:10.1038/s41699-022-00318-4

Low-energy Se ion implantation in MoS₂ monolayers

Minh N. Bui, Stefan Rost, Manuel Auge, Jhih Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Arsalan Hashemi, Hannu Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan N. O’Connell, Quentin M. Ramasse, Ursel Bangert, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynal

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Abstract

In this work, we study ultra-low energy implantation into MoS₂ monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use ⁸⁰Se⁺ ions at the energy of 20 eV and with fluences up to 5.0·10¹⁴ cm⁻². Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS_2−2xSe_2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS₂ monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.

Original language	English
Article number	42
Journal	npj 2D Materials and Applications
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/s41699-022-00318-4
Publication status	Published - Dec 2022

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Bui, M. N., Rost, S., Auge, M., Tu, J. S., Zhou, L., Aguilera, I., Blügel, S., Ghorbani-Asl, M., Krasheninnikov, A. V., Hashemi, A., Komsa, H. P., Jin, L., Kibkalo, L., O’Connell, E. N., Ramasse, Q. M., Bangert, U., Hofsäss, H. C., Grützmacher, D., & Kardynal, B. E. (2022). Low-energy Se ion implantation in MoS₂ monolayers. npj 2D Materials and Applications, 6(1), Article 42. https://doi.org/10.1038/s41699-022-00318-4

@article{dafdfcfd64ae4abeacb384be616ed215,

title = "Low-energy Se ion implantation in MoS2 monolayers",

abstract = "In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2−2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.",

author = "Bui, {Minh N.} and Stefan Rost and Manuel Auge and Tu, {Jhih Sian} and Lanqing Zhou and Irene Aguilera and Stefan Bl{\"u}gel and Mahdi Ghorbani-Asl and Krasheninnikov, {Arkady V.} and Arsalan Hashemi and Komsa, {Hannu Pekka} and Lei Jin and Lidia Kibkalo and O{\textquoteright}Connell, {Eoghan N.} and Ramasse, {Quentin M.} and Ursel Bangert and Hofs{\"a}ss, {Hans C.} and Detlev Gr{\"u}tzmacher and Kardynal, {Beata E.}",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s).",

year = "2022",

month = dec,

doi = "10.1038/s41699-022-00318-4",

language = "English",

volume = "6",

journal = "npj 2D Materials and Applications",

issn = "2397-7132",

number = "1",

}

Bui, MN, Rost, S, Auge, M, Tu, JS, Zhou, L, Aguilera, I, Blügel, S, Ghorbani-Asl, M, Krasheninnikov, AV, Hashemi, A, Komsa, HP, Jin, L, Kibkalo, L, O’Connell, EN, Ramasse, QM, Bangert, U, Hofsäss, HC, Grützmacher, D & Kardynal, BE 2022, 'Low-energy Se ion implantation in MoS₂ monolayers', npj 2D Materials and Applications, vol. 6, no. 1, 42. https://doi.org/10.1038/s41699-022-00318-4

TY - JOUR

T1 - Low-energy Se ion implantation in MoS2 monolayers

AU - Bui, Minh N.

AU - Rost, Stefan

AU - Auge, Manuel

AU - Tu, Jhih Sian

AU - Zhou, Lanqing

AU - Aguilera, Irene

AU - Blügel, Stefan

AU - Ghorbani-Asl, Mahdi

AU - Krasheninnikov, Arkady V.

AU - Hashemi, Arsalan

AU - Komsa, Hannu Pekka

AU - Jin, Lei

AU - Kibkalo, Lidia

AU - O’Connell, Eoghan N.

AU - Ramasse, Quentin M.

AU - Bangert, Ursel

AU - Hofsäss, Hans C.

AU - Grützmacher, Detlev

AU - Kardynal, Beata E.

PY - 2022/12

Y1 - 2022/12

N2 - In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2−2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.

AB - In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2−2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.

UR - http://www.scopus.com/inward/record.url?scp=85132832795&partnerID=8YFLogxK

U2 - 10.1038/s41699-022-00318-4

DO - 10.1038/s41699-022-00318-4

M3 - Article

AN - SCOPUS:85132832795

SN - 2397-7132

VL - 6

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

IS - 1

M1 - 42

ER -

Low-energy Se ion implantation in MoS₂ monolayers

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