Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering

Sara R.C. Pinto, Anabela G. Rolo, Maja Buljan, Adil Chahboun, Sigrid Bernstorff, Nuno P. Barradas, Eduardo Alves, Reza J. Kashtiban, Ursel Bangert, Maria J.M. Gomes

Research output: Contribution to journalArticlepeer-review

Abstract

In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.

Original languageEnglish
Article number341
Pages (from-to)341
JournalNanoscale Research Letters
Volume6
Issue number1
DOIs
Publication statusPublished - Jan 2011
Externally publishedYes

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