TY - JOUR
T1 - Low-temperature fabrication of layered self-organized ge clusters by RF-sputtering
AU - Pinto, Sara R.C.
AU - Rolo, Anabela G.
AU - Buljan, Maja
AU - Chahboun, Adil
AU - Bernstorff, Sigrid
AU - Barradas, Nuno P.
AU - Alves, Eduardo
AU - Kashtiban, Reza J.
AU - Bangert, Ursel
AU - Gomes, Maria J.M.
PY - 2011/1
Y1 - 2011/1
N2 - In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
AB - In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.
UR - http://www.scopus.com/inward/record.url?scp=84255167415&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-6-341
DO - 10.1186/1556-276X-6-341
M3 - Article
AN - SCOPUS:84255167415
SN - 1931-7573
VL - 6
SP - 341
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 341
ER -