Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form

G. Flynn, K. Stokes, K. M. Ryan

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

    Original languageEnglish
    Pages (from-to)5728-5731
    Number of pages4
    JournalChemical Communications
    Volume54
    Issue number45
    DOIs
    Publication statusPublished - 2018

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