TY - JOUR
T1 - Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form
AU - Flynn, G.
AU - Stokes, K.
AU - Ryan, K. M.
N1 - Publisher Copyright:
© The Royal Society of Chemistry 2018.
PY - 2018
Y1 - 2018
N2 - Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.
AB - Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.
UR - http://www.scopus.com/inward/record.url?scp=85047913622&partnerID=8YFLogxK
U2 - 10.1039/c8cc03075h
DO - 10.1039/c8cc03075h
M3 - Article
C2 - 29774896
AN - SCOPUS:85047913622
SN - 1359-7345
VL - 54
SP - 5728
EP - 5731
JO - Chemical Communications
JF - Chemical Communications
IS - 45
ER -