Mechanism that dictates pore width and <111>a pore propagation in InP

Robert P. Lynch, Nathan Quill, Colm O'Dwyer, Shohei Nakahara, D. Noel Buckley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report a mechanism for pore growth and propagation based on a three-step charge transfer model. The study is supported by electron microscopy analysis of highly doped n-InP samples anodised in aqueous KOH. The model and experimental data are used to explain propagation of pores of characteristic diameter preferentially along the <111>A directions. We also show evidence for deviation of pore growth from the <111>A directions and explain why such deviations should occur. The model is selfconsistent and predicts how carrier concentration affects the internal dimensions of the porous structures.

Original languageEnglish
Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
PublisherElectrochemical Society Inc.
Pages319-334
Number of pages16
Edition6
ISBN (Print)9781607683544
DOIs
Publication statusPublished - 2013
EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Publication series

NameECS Transactions
Number6
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country/TerritoryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

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