Molecular switching by proton-coupled electron transport drives giant negative differential resistance

Qian Zhang; Yulong Wang; Cameron Nickle; Ziyu Zhang; Andrea Leoncini; Dong Chen Qi; Kai Sotthewes; Alessandro Borrini; Harold J.W. Zandvliet; Enrique del Barco; Damien Thompson; Christian A. Nijhuis

doi:10.1038/s41467-024-52496-y

Molecular switching by proton-coupled electron transport drives giant negative differential resistance

Qian Zhang, Yulong Wang, Cameron Nickle, Ziyu Zhang, Andrea Leoncini, Dong Chen Qi, Kai Sotthewes, Alessandro Borrini, Harold J.W. Zandvliet, Enrique del Barco, Damien Thompson, Christian A. Nijhuis

Research output: Contribution to journal › Article › peer-review

Abstract

To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memory on/off ratios of (2.4 ± 0.6) × 10³. The switching dynamics probabilities are modulated by bias voltage sweep rate and can also be controlled by pH and relative humidity, confirmed by kinetic isotope effect measurements. The demonstrated dynamical and environment-specific modulation of giant NDR and memory effects provide new opportunities for bioelectronics and artificial neural networks.

Original language	English
Article number	8300
Journal	Nature Communications
Volume	15
Issue number	1
DOIs	https://doi.org/10.1038/s41467-024-52496-y
Publication status	Published - Dec 2024

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title = "Molecular switching by proton-coupled electron transport drives giant negative differential resistance",

abstract = "To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memory on/off ratios of (2.4 ± 0.6) × 103. The switching dynamics probabilities are modulated by bias voltage sweep rate and can also be controlled by pH and relative humidity, confirmed by kinetic isotope effect measurements. The demonstrated dynamical and environment-specific modulation of giant NDR and memory effects provide new opportunities for bioelectronics and artificial neural networks.",

author = "Qian Zhang and Yulong Wang and Cameron Nickle and Ziyu Zhang and Andrea Leoncini and Qi, {Dong Chen} and Kai Sotthewes and Alessandro Borrini and Zandvliet, {Harold J.W.} and {del Barco}, Enrique and Damien Thompson and Nijhuis, {Christian A.}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2024.",

year = "2024",

month = dec,

doi = "10.1038/s41467-024-52496-y",

language = "English",

volume = "15",

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T1 - Molecular switching by proton-coupled electron transport drives giant negative differential resistance

AU - Zhang, Qian

AU - Wang, Yulong

AU - Nickle, Cameron

AU - Zhang, Ziyu

AU - Leoncini, Andrea

AU - Qi, Dong Chen

AU - Sotthewes, Kai

AU - Borrini, Alessandro

AU - Zandvliet, Harold J.W.

AU - del Barco, Enrique

AU - Thompson, Damien

AU - Nijhuis, Christian A.

PY - 2024/12

Y1 - 2024/12

N2 - To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memory on/off ratios of (2.4 ± 0.6) × 103. The switching dynamics probabilities are modulated by bias voltage sweep rate and can also be controlled by pH and relative humidity, confirmed by kinetic isotope effect measurements. The demonstrated dynamical and environment-specific modulation of giant NDR and memory effects provide new opportunities for bioelectronics and artificial neural networks.

AB - To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memory on/off ratios of (2.4 ± 0.6) × 103. The switching dynamics probabilities are modulated by bias voltage sweep rate and can also be controlled by pH and relative humidity, confirmed by kinetic isotope effect measurements. The demonstrated dynamical and environment-specific modulation of giant NDR and memory effects provide new opportunities for bioelectronics and artificial neural networks.

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DO - 10.1038/s41467-024-52496-y

M3 - Article

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SN - 2041-1723

VL - 15

JO - Nature Communications

JF - Nature Communications

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M1 - 8300

ER -

Molecular switching by proton-coupled electron transport drives giant negative differential resistance

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